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首页> 外文期刊>IEEE Transactions on Semiconductor Manufacturing >Test Structures for End-Point Visualization of All-Plasma Dry Release of Deep-RIE MEMS Devices and Application to Release Process Modal Analysis
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Test Structures for End-Point Visualization of All-Plasma Dry Release of Deep-RIE MEMS Devices and Application to Release Process Modal Analysis

机译：Deep-RIE MEMS器件全等离子体干式释放的终点可视化测试结构及其在释放过程模态分析中的应用

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摘要

Test structures were developed to visualize the progress of the dry release of an MEMS device fabricated by deep reactive ion etching (DRIE). Because of the high aspect ratio of DRIE MEMS devices, the undercut progress cannot be observed from the surface. Therefore, a destructive test, i.e., a cross-sectional-view observation of a cleaved sample, has mostly been employed. Using the proposed test structure, the progress of the silicon undercutting can be evaluated in a nondestructive manner, using only an optical microscope. The test structure was not only found to be useful in optimizing the release etching procedure, but also allows us to discover a particular DRIE mode that is useful for dry release. Indeed, most DRIE process engineers have considered and mainly tuned the etching phase; using the test structures, we found that the deposition phase of DRIE can be strategically used to further increase the undercutting speed. The new mode, referred to as the “undercut directional etching mode,” intentionally leaves a fluorocarbon layer for protection of the side-wall, at the bottom center of the trench openings. Because of the deposition layer remaining at the bottom center, the introduced plasma species are concentrated towards the edge of the trench, i.e., at the foot of silicon structure to be released, thereby enhancing the undercut etching. A second test structure identified the appearance of the new mode and visualized the dependence of the etching behavior on the trench opening width. The optimized etching conditions determined using the test structures led to the successful release of a standard in-plane MEMS device.
机译：开发测试结构以可视化通过深反应离子蚀刻（DRIE）制造的MEMS器件的干释放过程。由于DRIE MEMS器件的纵横比较高，因此无法从表面观察到底切进度。因此，主要采用破坏性试验，即对裂解样品的横截面观察。使用提出的测试结构，仅使用光学显微镜就可以无损评估硅底切的进度。发现该测试结构不仅可用于优化剥离蚀刻工艺，而且还使我们能够发现一种适用于干剥离的特殊DRIE模式。实际上，大多数DRIE工艺工程师已经考虑并主要调整了蚀刻阶段。使用测试结构，我们发现DRIE的沉积阶段可以策略性地用于进一步提高底切速度。称为“底切定向蚀刻模式”的新模式在沟槽开口的底部中心有意保留了一层碳氟化合物层，用于保护侧壁。由于沉积层保留在底部中心，因此引入的等离子体物质集中到沟槽的边缘，即在要释放的硅结构的底部，从而增强了底切蚀刻。第二个测试结构确定了新模式的外观，并可视化了蚀刻行为对沟槽开口宽度的依赖性。使用测试结构确定的最佳蚀刻条件导致成功发布了标准的平面MEMS器件。

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