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Improving the accuracy and efficiency of junction capacitance characterization: strategies for probing configuration and data set size

机译:提高结电容表征的准确性和效率:探测配置和数据集大小的策略

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In this paper, the on-wafer measurement of junction depletion capacitance is examined. This work provides an in-depth discussion of possible probing configurations which can be used. It outlines a method to consistently measure the junction capacitances accurately. The results from this method compare favorably with those extracted using S-parameter measurements. Additionally, methods are formulated to reduce the number of data points required for parameter extraction while at the same time maintaining a high model accuracy.
机译:在本文中,对结耗尽电容的晶圆上测量进行了检验。这项工作提供了可以使用的可能的探测配置的深入讨论。它概述了一种可始终如一地准确测量结电容的方法。该方法的结果与使用S参数测量所提取的结果相比具有优势。此外,制定了减少参数提取所需数据点数量的方法,同时又保持了较高的模型精度。

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