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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Comparison of the Thermal Degradation of Heavily Nb-Doped and Normal PZT Thin Films
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Comparison of the Thermal Degradation of Heavily Nb-Doped and Normal PZT Thin Films

机译：重掺杂Nb和普通PZT薄膜的热降解比较

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摘要

The degradation of niobium-doped lead zirconate titanate (PZT) and two types of PZT thin films were investigated. Undoped PZT, two-step PZT, and heavily Nb-doped PZT (PNZT) around the morphotropic phase boundary were in situ deposited under optimum condition by RF-magnetron sputtering. All 2- μm -thick films had dense perovskite columnar grain structure and self-polarized (100) dominant orientation. PZT thin films were deposited on Pt/TiOx bottom electrode on Si wafer, and PNZT thin film was on Ir/TiW electrode with the help of orientation control. Sputtered PZT films formed on microelectromechanical system (MEMS) gyroscope and the degradation rates were compared at different temperatures. PNZT showed the best resistance to the thermal degradation, followed by two-step PZT. To clarify the effect of oxygen vacancies on the degradation of the film at high temperature, photoluminescence measurement was conducted, which confirmed that oxygen vacancy rate was the lowest in heavy PNZT. Nb-doping PZT thin films suppressed the oxygen deficit and made high imprint with self-polarization. This defect distribution and high internal field allowed PNZT thin film to make the piezoelectric sensors more stable and reliable at high temperature, such as reflow process of MEMS packaging.
机译：研究了铌掺杂锆钛酸铅（PZT）和两种类型的PZT薄膜的降解。在最佳条件下，通过射频磁控溅射原位沉积了非晶态的PZT，两步态的PZT和Nb的重掺杂PZT（PNZT）。所有2μm厚的薄膜均具有致密的钙钛矿柱状晶粒结构和自极化（100）主导取向。 PZT薄膜沉积在Si晶片的Pt / TiOx底部电极上，而PNZT薄膜借助于取向控制在Ir / TiW电极上。比较了在不同温度下在微机电系统（MEMS）陀螺仪上形成的溅射PZT膜及其降解率。 PNZT对热降解表现出最好的抵抗力，其次是两步PZT。为了阐明氧空位对薄膜在高温下的降解的影响，进行了光致发光测量，这证实了在重质PNZT中氧空位率最低。掺Nb的PZT薄膜抑制了氧的缺乏，并具有自极化的高烙印。这种缺陷分布和高内部电场使PNZT薄膜能够使压电传感器在高温下（例如MEMS封装的回流工艺）更加稳定和可靠。

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