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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Electrostatic Generation of Bulk Acoustic Waves and Electrical Parameters of Si-MEMS Resonators
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Electrostatic Generation of Bulk Acoustic Waves and Electrical Parameters of Si-MEMS Resonators

机译：体声波的静电产生和Si-MEMS谐振器的电参数

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摘要

This paper proposes an analytical approach to model the generation of bulk acoustic waves in an electrostatically excited silicon MEMS structure, as well as its electromechanical response in terms of static and dynamic displacements, electromechanical coupling, and motional current. The analysis pertains to the single-port electrostatic drive of trapped-energy thickness-extensional (TE) modes in thin plates. Both asymmetric single-side and symmetric double-side electrostatic gap configurations are modeled. Green’s function is used to describe the characteristic of the static displacement of the driven surface of the structure versus the dc bias voltage, which allows us to determine the electrical response of the resonator. Optical and electrical characterizations have been performed on resonator samples operating at 10.3 MHz on the fundamental of TE mode under single-side electrostatic excitation. The various figures of merit depend on the dc bias voltage. Typical values of 9000 for the Q-factor, and of for the electromechanical coupling factor have been obtained with for -thick gaps. Here-considered modes have a typical temperature coefficients of frequency (TCF) close to . We conclude that the practical usability of such electrostatically excited bulk acoustic waves (BAW) resonators essentially depends on the efficiency of the compensation of feed-through capacitance.
机译：本文提出了一种分析方法，可以对静电激励的硅MEMS结构中体声波的产生及其在静态和动态位移，机电耦合和运动电流方面的机电响应进行建模。该分析涉及薄板中的捕获能量厚度扩展（TE）模式的单端口静电驱动。不对称的单侧和对称的双面静电间隙配置均已建模。格林函数用于描述结构从动表面的静态位移相对于直流偏置电压的特性，这使我们能够确定谐振器的电响应。在单侧静电激励下，在TE模式的基础上，对工作于10.3 MHz的谐振器样品进行了光学和电学表征。品质因数取决于直流偏置电压。对于具有较大间隙的情况，已获得Q因子的典型值9000和机电耦合因子的典型值。这里考虑的模式的典型温度温度系数（TCF）接近。我们得出的结论是，此类静电激发体声波（BAW）谐振器的实际可用性基本上取决于馈通电容补偿的效率。

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