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Crystalline quality of the trigonal piezoelectric materials and effects of the extended defects

机译:三角压电材料的晶体质量和扩展缺陷的影响

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摘要

Many frequently used or promising piezoelectric materials belong to crystal classes 32 or 3m. Among them are ?? quartz and its crystallographic analogs (AlPO4, GaPO4, ;1;-GeO2, etc.), the numerous materials of the langasite (La-3Ga5SiO,sub>14) family and also lithium tantalate (LiTaO,sub>3) and lithium niobate (LiNbO3). In this paper we study the present state of the art for these materials, indicate their principal point and extended defects, and present methods to reduce the dislocation density. Large concentrations of intrinsic point defects often exist in crystal grown at very high temperatures. The point defects (intrinsic or related to impurities) modify the constants and can increase the acoustic losses. This is the case for the alkali ions and the OH that induce severe losses in different temperature intervals. The extended defects also affect the performances of the piezoelectric devices. Some, such as twins, ferroelectric domains, or large solid or liquid inclusions, have very detrimental effects. Dislocations, growth bands, and planar defects are more difficult to avoid and affect the devices in a more subtle manner. In quartz and its analogs, dislocations seem to increase the nonlinear elastic effects and have a collective effect on the vibration modes, particularly in energy trapping resonators. Growth bands and stacking faults also produce similar effects.
机译:许多常用或有希望的压电材料属于32或3m晶体。其中有??石英及其晶体类似物(AlPO 4 ,GaPO 4 、; 1; -GeO 2 等),这是硅铁矿的众多材料(La- 3 Ga 5 SiO,sub> 14 )族以及钽酸锂(LiTaO,sub> 3 )和铌酸锂( LiNbO3 )。在本文中,我们研究了这些材料的最新技术,指出了它们的主要观点和扩展的缺陷,并提出了降低位错密度的方法。在非常高的温度下生长的晶体中经常存在高浓度的本征点缺陷。点缺陷(本征缺陷或与杂质有关的缺陷)会修改常数,并会增加声损耗。碱金属离子和OH会在不同的温度间隔内引起严重的损耗,情况就是如此。扩展的缺陷也影响压电器件的性能。一些,例如孪晶,铁电畴或大的固体或液体夹杂物,具有非常有害的作用。位错,生长带和平面缺陷更难避免,并且以更细微的方式影响器件。在石英及其类似物中,位错似乎会增加非线性弹性效应,并且对振动模式具有集体效应,特别是在能量陷阱谐振器中。生长带和堆垛层错也产生类似的影响。

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