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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Application of an Alternating Phase-Shifting Mask Design Method to Near-Field Photolithography for Fabricating More Than 2 GHz SAW Devices
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Application of an Alternating Phase-Shifting Mask Design Method to Near-Field Photolithography for Fabricating More Than 2 GHz SAW Devices

机译：交替相移掩模设计方法在制造2 GHz以上声表面波器件的近场光刻中的应用

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摘要

We use an alternating phase-shifting mask design method (APSMDM) to design and fabricate a specially designed surface acoustic wave (SAW) filter mold that has a linewidth pattern of only 5 mum (not small). A basic SAW filter mold [having a general interdigital transducer (IDT) pattern] also is fabricated for comparison. A near-field phase shift lithographic (NFPSL) process is applied in the fabrication of the narrow gap SAW devices, during which process the narrow gaps and short optical distance (SOD) electrodes are derived. We note that, in this way, important features (such as floating electrodes, high-metallization ratio, and a narrow gap structure) for enhancing the performance of high-efficiency SAW devices can be produced simultaneously. In addition, the other half of the special IDT pattern strips can be derived by using this APSMDM. This causes a decrease in the periodicity of the IDT pattern and, therefore, a decrease in the acoustic wavelength, in turn leading to an increase in the Deltaf (Deltaf is the difference in frequency between the harmonic and its adjacent harmonic) and a decrease in the insertion loss. A 2.75 GHz SAW filter is fabricated using the APSMDM with a mold with only 5-mum wide linewidth fingers.
机译：我们使用交替相移掩模设计方法（APSMDM）设计和制造一种特殊设计的表面声波（SAW）滤波器模具，该模具的线宽图案仅为5微米（不小）。为了比较，还制造了基本的SAW滤波器模具[具有通用的叉指换能器（IDT）模式]。在窄间隙声表面波器件的制造中采用了近场相移光刻（NFPSL）工艺，在此过程中得出了窄间隙和短光学距离（SOD）电极。我们注意到，以这种方式，可以同时产生用于增强高效声表面波器件性能的重要特征（例如浮置电极，高金属化比和窄间隙结构）。另外，可以使用此APSMDM导出另一半特殊IDT模式带。这会导致IDT图案的周期性降低，从而导致声波波长减小，进而导致Deltaf增大（Deltaf是谐波与其相邻谐波之间的频率差），而Δf减小。插入损耗。使用APSMDM和仅具有5微米宽线宽指状件的模具，可制造出2.75 GHz声表面波滤波器。

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