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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Characterization of flux-grown PZN-PT single crystals for high-performance piezo devices
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Characterization of flux-grown PZN-PT single crystals for high-performance piezo devices

机译：高性能压电器件的助熔剂生长的PZN-PT单晶的表征

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摘要

Relaxor ferroelectric Pb(Zn1/3Nb2/3)O3-xPbTiO3 (PZN-PT) and Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) single crystals are the potential candidates for future high-performance piezoelectric devices due to their exceptionally high dielectric and piezoelectric properties. Characterization on flux-grown PZN-PT single crystals of different orientations revealed that PZN-(6-7)%PT single crystals show good homogeneity in dielectric and electromechanical properties and composition. When poled in [001] direction, these crystals exhibit high longitudinal-mode properties with dielectric constant (KT)ap7000, piezoelectric coefficients (d33)ap2800 pC/N, and electromechanical coupling factors (k33)ges0.92. For [011]-cut crystals, optimally poled PZN-7%PT single crystal exhibits very high transverse-mode dielectric and piezoelectric properties with KTges5000, d32ap-3800 pC/N and k32ges0.90. [011]-poled PZN-6%PT has d32ap-3000 pC/N and comparable k32 and KT values. In comparison with melt-grown PMN-PT single crystals, flux-grown PZN-PT single crystals show good compositional homogeneity, superior and consistent dielectric and electromechanical properties, and higher depolarization temperatures (Tup).
机译：弛豫铁电Pb（Zn1 / 3Nb2 / 3）O3-xPbTiO3（PZN-PT）和Pb（Mg1 / 3Nb2 / 3）O3-PbTiO3（PMN-PT）单晶是未来高性能压电器件的潜在候选人它们具有极高的介电和压电性能。对不同方向的助熔剂生长的PZN-PT单晶进行表征表明，PZN-（6-7）％PT单晶在介电和机电性能及组成方面显示出良好的均质性。当沿[001]方向极化时，这些晶体显示出高纵向模式特性，介电常数（KT）ap7000，压电系数（d33）ap2800 pC / N和机电耦合系数（k33）ges0.92。对于[011]切割晶体，最佳极化PZN-7％PT单晶具有非常高的横向模介电和压电特性，KTges5000，d32ap-3800 pC / N和k32ges0.90。 [011]极化PZN-6％PT的d32ap-3000 pC / N和可比的k32和KT值。与熔融生长的PMN-PT单晶相比，助熔剂生长的PZN-PT单晶具有良好的成分均匀性，优异且一致的介电和机电性能以及更高的去极化温度（Tup）。

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