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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Nondestructive evaluation of large-area PZN-8%PT single crystal wafers for medical ultrasound imaging probe applications
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Nondestructive evaluation of large-area PZN-8%PT single crystal wafers for medical ultrasound imaging probe applications

机译：用于医学超声成像探头的大面积PZN-8％PT单晶晶片的无损评估

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摘要

A nondestructive quality evaluation and control procedure for large-area, [001]-cut PZN-8%PT wafers is described. The crystals were grown by the flux technique engineered to promote [001] layer growth of the crystals. The wafers were sliced parallel to the [001] layer growth plane. Curie temperature (T/sub c/) variations, measured with matching arrays of dot electrodes (of 5.0 mm in center-to-center spacing), were found to be better than /spl plusmn/4.01/spl deg/C both within wafers and from wafer to wafer. After selective dicing to give final wafers of narrower T/sub c/ distributions (e.g., /spl plusmn/ 3.0/spl deg/C or better), the wafers were coated with complete electrodes and poled at room temperature at 0.7-0.9 kV/mm. Typical overall properties of the poled wafers were: K/sub 3//sup T/ = 5, 200 (/spl plusmn/10% from wafer to wafer), tan /spl delta/ > 0.01 (all wafers), and k/sub t/ = 0.55 (/spl plusmn/5%) (all percentage variations are in relative percentages). Then, the distributions of K/sub 3//sup S/, tan /spl delta/, and k/sub t/ were measured by the array dot electrode technique. The variations in K/sub 3//sup S/ (hence K/sub 3//sup T/) and k/sub t/ within individual wafers were found to be within 10% and 5%, respectively. The dielectric loss values, measured at 1 kHz, were consistently low, being >0.01 throughout the wafers. The k/sub t/ values determined by the dot electrodes were found to be about 5% smaller than those obtained with the complete electrodes, which can be attributed to an increase in capacitance ratio due to the partial electroding. The k/sub 33/ values, deduced using the relation K/sub 3//sup S/ /spl ap/ (1 k/sub 33//sup 2/) K/sub 3//sup T/, from the mean K/sub 3//sup S/ and overall K/sub 3//sup T/ values, average 0.94 (/spl plusmn/2%). The present work shows that the distribution of T/sub c/ within wafers can be used as a convenient check for the uniformity in composition and electromechanical properties of PZN-8%PT single crystal wafers. Our results show that, to control /spl Delta/K/sub 3//sup T/ and /spl Delta/k/sub t/ within individual wafer to /spl les/ 10% and 5%, respectively, the variation in T/sub c/ within the wafer should be kept within /spl plusmn/3.0/spl deg/C or better.
机译：描述了一种用于大面积[001]切割的PZN-8％PT晶片的无损质量评估和控制程序。通过设计用于促进晶体的[001]层生长的助熔剂技术来生长晶体。平行于[001]层生长平面切片晶片。发现用匹配的点电极阵列（中心到中心间距为5.0 mm）测量的居里温度（T / sub c /）变化均优于/ spl plusmn / 4.01 / spl deg / C从一个晶圆到另一个晶圆。经过选择性切割后，最终的晶圆具有更窄的T / sub c /分布（例如，/ spl plusmn / 3.0 / spl deg / C或更高），然后在晶圆上涂覆完整的电极，并在室温下以0.7-0.9 kV /毫米极化晶片的典型总体性能为：K / sub 3 // sup T / = 5，200（从晶片到晶片，/ spl加/ 10％），tan / spl增量/> 0.01（所有晶片），和k / sub t / = 0.55（/ spl plusmn / 5％）（所有百分比变化均以相对百分比表示）。然后，通过阵列点电极技术测量K / sub 3 // sup S /，tan / spl delta /和k / sub t /的分布。发现单个晶片内的K / sub 3 // sup S /（因此，K / sub 3 // sup T /）和k / sub t /的变化分别在10％和5％之内。在1 kHz下测得的介电损耗值始终较低，在整个晶圆中> 0.01。发现由点电极确定的k / sub t /值比用完整电极获得的k / sub t /值小约5％，这可以归因于由于部分电镀而导致的电容比的增加。从平均值使用关系K / sub 3 // sup S / / spl ap /（1 k / sub 33 // sup 2 /）K / sub 3 // sup T /推导得出k / sub 33 /值。 K / sub 3 // sup S /和整体K / sub 3 // sup T /值，平均值为0.94（/ spl plusmn / 2％）。目前的工作表明，晶片中T / sub c /的分布可用于方便地检查PZN-8％PT单晶晶片的组成和机电性能的均匀性。我们的结果表明，要将单个晶片内的/ spl Delta / K / sub 3 // sup T /和/ spl Delta / k / sub t /分别控制为/ spl les / 10％和5％，T的变化晶圆内的/ sub c /应该保持在/ spl plusmn / 3.0 / spl deg / C或更好的温度范围内。

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