• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Nondestructive evaluation of large-area PZN-8%PT single crystal wafers for medical ultrasound imaging probe applications
【24h】

Nondestructive evaluation of large-area PZN-8%PT single crystal wafers for medical ultrasound imaging probe applications

机译：用于医学超声成像探头的大面积PZN-8％PT单晶晶片的无损评估

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

A nondestructive quality evaluation and control procedure for large-area, [001]-cut PZN-8%PT wafers is described. The crystals were grown by the flux technique engineered to promote [001] layer growth of the crystals. The wafers were sliced parallel to the [001] layer growth plane. Curie temperature (Tc) variations, measured with matching arrays of dot electrodes (of 5.0 mm in center-to-center spacing), were found to be better than ±4.01°C both within wafers and from wafer to wafer. After selective dicing to give final wafers of narrower Tc distributions (e.g., ± 3.0°C or better), the wafers were coated with complete electrodes and poled at room temperature at 0.7-0.9 kV/mm. Typical overall properties of the poled wafers were: K3T = 5, 200 (±10% from wafer to wafer), tan Δ < 0.01 (all wafers), and kt = 0.55 (±5%) (all percentage variations are in relative percentages). Then, the distributions of K3S, tan Δ, and kt were measured by the array dot electrode technique. The variations in K3S (hence K3T) and kt within individual wafers were found to be within 10% and 5%, respectively. The dielectric loss values, measured at 1 kHz, were consistently low, being <0.01 throughout the wafers. The kt values determined by the dot electrodes were found to be about 5% smaller than those obtained with the complete electrodes, which can be attributed to an increase in capacitance ratio due to the partial electroding. The k33 values, deduced using the relation K3S ≈ (1 k332) K3T, from the mean K3S and overall K3T values, average 0.94 (±2%). The present work shows that the distribution of Tc within wafers can be used as a convenient check for the uniformity in composition and electromechanical properties of PZN-8%PT single crystal wafers. Our results show that, to control ΔK3T and Δkt within individual wafer to ≤ 10% and 5%, respectively, the variation in Tc within the wafer should be kept within ±3.0°C or better.
机译：描述了一种用于大面积[001]切割的PZN-8％PT晶片的无损质量评估和控制程序。通过设计用于促进晶体的[001]层生长的助熔剂技术来生长晶体。平行于[001]层生长平面切片晶片。用点电极的匹配阵列（中心到中心间距为5.0 mm）测量的居里温度（Tc）变化在晶圆内和晶圆之间均优于±4.01°C。选择性切割后，最终的晶片具有更窄的Tc分布（例如±3.0°C或更高），然后在晶片上涂覆完整的电极，并在室温下以0.7-0.9 kV / mm极化。极化晶片的典型总体性能为：K3T = 5，200（晶片之间为±10％），tanΔ<0.01（所有晶片），kt = 0.55（±5％）（所有百分比变化均为相对百分比） ）。然后，通过阵列点电极技术测量K 3 S，tanΔ和kt的分布。发现单个晶片内的K3S（因此为K3T）和kt的变化分别在10％和5％之内。在1 kHz下测得的介电损耗值一直很低，在整个晶圆中均小于0.01。发现由点电极确定的kt值比用完整电极获得的kt值小约5％，这可以归因于由于部分电镀而导致的电容比的增加。从关系K3S≈（1 k332）K3T​​推导出的k33值，平均K3S和总体K3T值平均为0.94（±2％）。目前的工作表明，晶片中Tc的分布可以方便地检查PZN-8％PT单晶晶片的组成和机电性能的均匀性。我们的结果表明，要分别控制单个晶片内的ΔK3T和Δkt≤10％和5％，晶片内Tc的变化应保持在±3.0°C或更好。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号