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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Analysis of SAW properties of epitaxial ZnO films grown onR-Al2O3 substrates
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Analysis of SAW properties of epitaxial ZnO films grown onR-Al2O3 substrates

机译：在R-Al2O3衬底上生长的外延ZnO薄膜的SAW特性分析

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摘要

ZnO thin films with a high piezoelectric coupling coefficient arenwidely used for high frequency and low loss surface acoustic wave (SAW)ndevices when the film is deposited on top of a high acoustic velocitynsubstrate, such as diamond or sapphire. The performance of these devicesnis critically dependent on the quality of the ZnO films as well as ofnthe interface between ZnO and the substrate. In this paper, we reportnthe studies on piezoelectric properties of epitaxial (112¯0) ZnOnthin films grown on R-plane sapphire substrates using metal organicnchemical vapor deposition (MOCVD) technique. The c-axis of the ZnO filmnis in-plane. The ZnO/R-Al2O3 interface isnatomically sharp. SAW delay lines, aligned parallel to the c-axis, werenused to characterize the surface wave velocity, coupling coefficient,nand temperature coefficient of frequency as functions of film thicknessnto wavelength ratio (h/Λ). The acoustic wave properties of thenmaterial system were calculated using Adler's matrix method, and thendevices were simulated using the quasi-static approximation based onnGreen's function analysis
机译：当将薄膜沉积在诸如金刚石或蓝宝石之类的高声速基底上时，具有高压电耦合系数的ZnO薄膜已广泛用于高频和低损耗表面声波（SAW）器件。这些器件的性能主要取决于ZnO膜的质量以及ZnO与衬底之间的界面。在本文中，我们报道了使用金属有机化学气相沉积（MOCVD）技术在R面蓝宝石衬底上生长的外延（112’0）ZnOnthin薄膜的压电特性的研究。 ZnO薄膜的c轴在平面内。 ZnO / R-Al2O3界面在原子上清晰。使用与c轴平行排列的SAW延迟线来表征表面波速度，耦合系数，频率的温度系数和膜厚度对波长比（h /Λ）的函数。然后使用Adler矩阵方法计算材料系统的声波特性，然后基于nGreen函数分析使用准静态逼近法模拟设备。

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