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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Electromechanical coupling constant extraction of thin-filmpiezoelectric materials using a bulk acoustic wave resonator
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Electromechanical coupling constant extraction of thin-filmpiezoelectric materials using a bulk acoustic wave resonator

机译：使用体声波谐振器提取薄膜压电材料的机电耦合常数

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摘要

Thin-film piezoelectric materials such as ZnO and AlN have greatnpotential for on-chip devices such as filters, actuators and sensors.nThe electromechanical coupling constant is an important materialnparameter which determines the piezoelectric response of these films.nThis paper presents a technique based on the Butterworth Van-Dyke (BVD)nmodel which, together with a simple one-mask over-moded resonator, cannbe used to extract the bulk, one-dimensional electromechanical couplingnconstant K2 of any piezoelectrically active thin-film. ThenBVD model is used to explicitly define the series resonance, parallelnresonance, and quality factor Q of any given resonating mode. Commonnmethods of defining the series resonance, parallel resonance, and Q arenshown to be inaccurate for low coupling, lossy resonators such as thenover-moded resonator. Specifically, an electromechanical couplingnconstant K2 of (2.6±0.1)% was measured for an (002)nc-axis textured AlN film with an X-ray diffraction rocking curve ofn7.5° using the BVD based extraction technique
机译：ZnO和AlN等薄膜压电材料对于滤波器，执行器和传感器等片上器件具有巨大的潜力.n机电耦合常数是决定这些膜的压电响应的重要材料参数.n本文提出了一种基于压电材料的技术。 Butterworth Van-Dyke（BVD）n模型与简单的单掩膜过调制谐振器一起不能用于提取任何压电活性薄膜的大体积一维机电耦合常数K2。然后，BVD模型用于明确定义任何给定谐振模式的串联谐振，并联谐振和品质因数Q。对于低耦合，有损谐振器（如过调制的谐振器），定义串联谐振，并联谐振和Q的通用方法未显示出准确性。具体而言，使用基于BVD的提取技术，对X射线衍射摇摆曲线为n7.5°的（002）nc轴织构化AlN膜，测得的机电耦合常数k2为（2.6±0.1）％。

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