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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Resistivity and adhesive strength of thin film metallizations on single crystal quartz
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Resistivity and adhesive strength of thin film metallizations on single crystal quartz

机译：单晶石英上薄膜金属化层的电阻率和粘合强度

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摘要

Resistivity and adhesive strength were measured for the thin films 450 /spl Aring/ Cr-1800 /spl Aring/ Au, 450 /spl Aring/ Cr-1000 /spl Aring/ Mo-1800 /spl Aring/ Au, 450 /spl Aring/ Cr-1000 /spl Aring/ Ni-1800 /spl Aring/ Au, 450 /spl Aring/ Mo-1800 /spl Aring/ Au, 1800 /spl Aring/ Au, and 2000 /spl Aring/ Al on z-and AT-oriented single crystal quartz substrates in the as-deposited condition as well as after thermal annealing at 380/spl deg/C and 450/spl deg/C for 30 min in air or vacuum. The Cr-Au films exhibited significant resistivity increases after thermal annealing which were caused by the interdiffusion of Cr and Au. Barrier layers of Mo or Ni limited such increases after heat treatment. The Mo-Au, Au, and Al films exhibited resistivity decreases following thermal annealing. The mean adhesive strengths of the Cr-Au, Cr-Mo-Au, and Cr-Ni-Au films were excellent in the as-deposited and annealed conditions, ranging from 41 MPa to 70 MPa. The Mo-Au and Au films maintained relatively poor adhesion under all circumstances. Heat treatment improved the poor adhesive strength of the as-deposited Al films to values exceeding 63 MPa. Resistivity and adhesive strengths did not differ significantly between the z- and AT-oriented substrates.
机译：测量了薄膜450 / spl Aring / Cr-1800 / spl Aring / Au，450 / spl Aring / Cr-1000 / spl Aring / Mo-1800 / spl Aring / Au，450 / spl Aring /的电阻率和粘合强度Cr-1000 / spl Aring / Ni-1800 / spl Aring / Au，450 / spl Aring / Mo-1800 / spl Aring / Au，1800 / spl Aring / Au和2000 / spl Aring / Al在z-和AT-上在沉积状态下以及在380 / spl deg / C和450 / spl deg / C的空气或真空中进行30分钟的热退火之后，制备取向单晶石英衬底。 Cr-Au膜在热退火后表现出明显的电阻率增加，这是由于Cr和Au的相互扩散引起的。 Mo或Ni的阻挡层在热处理后限制了这种增加。在热退火之后，Mo-Au，Au和Al膜的电阻率降低。 Cr-Au，Cr-Mo-Au和Cr-Ni-Au膜在沉积和退火条件下的平均粘合强度极佳，范围为41 MPa至70 MPa。在所有情况下，Mo-Au和Au膜均保持相对较差的附着力。热处理将沉积的Al膜的差的粘合强度改善到超过63MPa的值。 z方向和AT方向的基材之间的电阻率和粘合强度没有显着差异。

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