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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Acoustoelectric charge injection in semiconductors
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Acoustoelectric charge injection in semiconductors

机译：半导体中的声电荷注入

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摘要

A considerable change of trapped and free electric charge isnobserved in piezoelectric semiconductors in the presence of a travelingnacoustic wave. The electric field, induced by the ultrasound, alters thenelectric equilibrium of the semiconductor sample, resulting in annaccumulation of majority carriers at the surface with a consequentndecrease in surface resistance. In specific cases, charge injectionnoccurs at the semiconductor-metal contact area due to the large electricnfield induced by the acoustic wave. This effect, here referred to as thenAcoustoelectric Charge Injection, was also investigated for the case innwhich a Surface Acoustic Wave (SAW) is propagating along the metalizednsurface of a semiconductor. The injected charge is experimentallynmeasured having a exponential time decay typical of a deep trap level,nthus suggesting that Acoustic Charge Injection can modify the transientnbehavior of high-speed analog signal processing devices based on SAW,nacoustooptic, and acoustic charge transport (ACT) phenomena.nExperimental results and theoretical calculations are presented for CdSnsamples and for a metalized GaAs-epilayer grown on semi-insulating GaAsnsubstrate
机译：在存在行进的声波的情况下，在压电半导体中无法观察到捕获电荷和自由电荷的显着变化。超声感应的电场会改变半导体样品的电平衡，从而导致多数载流子在表面堆积，从而降低表面电阻。在特定情况下，由于声波感应出的大电场，电荷注入不会出现在半导体与金属的接触区域。对于表面声波（SAW）沿着半导体的金属化表面传播的情况，也研究了这种效应（这里称为声电荷注入）。通过实验测量注入的电荷具有典型的深陷阱能级的指数时间衰减，因此表明，声电荷注入可以基于声表面波，声光子和声电荷传输（ACT）现象来修改高速模拟信号处理设备的瞬态行为。给出了CdSn样品和在半绝缘GaAsn衬底上生长的金属化GaAs-外延层的实验结果和理论计算

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