Optical information storage and charge traps in PZT thin films

Ivey M.; Mancha S.

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Optical information storage and charge traps in PZT thin films

机译：PZT薄膜中的光学信息存储和电荷陷阱

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Storage of optical data in thin film PZT (lead zirconate titanate) has been demonstrated at a wavelength of 833 nm. A method for the storage and detection of simple optical-data images in thin PZT films is described. Dots and bars were stored in a 0.5- mu m-thick 0/50/50 PZT using 488, 543, 633, and 833 nm wavelengths, and detected by measuring photocurrents while scanning a low-power read beam across the film. The data presented suggest that traps and related photoinduced charge carrier generation play an important role in this optical storage mechanism.

机译：已经证明在833 nm波长下将光学数据存储在薄膜PZT（钛酸锆钛酸铅）中。描述了一种用于在PZT薄膜中存储和检测简单光学数据图像的方法。将点和条存储在0.5微米厚的0/50/50 PZT中，使用488、543、633和833 nm波长，并通过在扫描低功率读取光束穿过胶片时测量光电流来进行检测。提出的数据表明，陷阱和相关的光诱导电荷载流子的产生在这种光学存储机制中起着重要作用。

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《IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control》 |1991年第4期|P.337-343|共7页
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Ivey M.; Mancha S.;
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Optical information storage and charge traps in PZT thin films

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