A CMOS SRAM Test Cell Design Using Selectively Metal-Covered Transistors for a Laser Irradiation Failure Analysis

Hiroshi HATANO

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A CMOS SRAM Test Cell Design Using Selectively Metal-Covered Transistors for a Laser Irradiation Failure Analysis

机译：使用选择性金属覆盖晶体管进行激光辐照失效分析的CMOS SRAM测试单元设计

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摘要

A laser irradiation experiment for photocurrent induced failure investigations was described. In order to focus a laser beam on a desired transistor, novel test circuit structures using selectively metal-covered transistors were proposed. Photocurrent induced upset failures were successfully observed in fabricated CMOS SRAM test cells. Results were discussed with SPICE simulations.

机译：描述了用于光电流诱发故障研究的激光照射实验。为了将激光束聚焦在期望的晶体管上，提出了使用选择性地金属覆盖的晶体管的新颖的测试电路结构。在制造的CMOS SRAM测试单元中成功观察到了光电流引起的失稳故障。使用SPICE仿真讨论了结果。

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来源
《IEICE Transactions on Electronics》 |2012年第11期|1827-1829|共3页
作者
Hiroshi HATANO;
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作者单位

Department of Electrical and Electronic Engineering, Faculty of Science and Technology, Shizuoka Insti-tute of Science and Technology, Fukuroi-shi, 437-8555 Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
photocurrent induced failure; metal-covered transistor; CMOS SRAM; simulation;

机译：光电流引起的故障;金属覆盖的晶体管CMOS SRAM;模拟;

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1. Failure analysis of high-density CMOS SRAMs: using realistic defect modeling and I/sub DDQ/ testing [J] . Naik S., Agricola F. IEEE Design & Test of Computers Magazine . 1993,第2期

机译：高密度CMOS SRAM的故障分析：使用实际的缺陷建模和I / sub DDQ /测试
2. A New Approach for Single-Event Effects Testing With Heavy Ion and Pulsed-Laser Irradiation: CMOS/SOI SRAM Substrate Removal [J] . Kanyogoro N.Buchner S.McMorrow D.Hughes H.Liu M. S.Hurst A.Carpasso C. Nuclear Science, IEEE Transactions on . 2010,第6期

机译：用重离子和脉冲激光辐照进行单事件效应测试的新方法：CMOS / SOI SRAM基板去除
3. A Proposed Design of Five Transistor CMOS SRAM Cell for High Speed Applications [J] . Bala Rama Pavithra, Suresh Angadi International Journal of Engineering Research and Applications . 2013,第3期

机译：用于高速应用的五晶体管CMOS SRAM单元的建议设计
4. A proposition on test circuit structures using selectively metal-covered transistors for a laser irradiation failure analysis [C] . Hatano H. Microelectronic Test Structures (ICMTS), 2012 IEEE International Conference on . 2012

机译：关于使用选择性金属覆盖晶体管进行激光辐照失效分析的测试电路结构的建议
5. Design and Performance Evaluation of 8T SRAM Cell Using FinFET and CMOS at 16nm Technology [D] . Mandadi, Prasanth. 2021

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6. Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application [O] . Marcos Benedicto, Beatriz Galiana, Jon M Molina-Aldareguia, 2011

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A CMOS SRAM Test Cell Design Using Selectively Metal-Covered Transistors for a Laser Irradiation Failure Analysis

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