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首页> 外文期刊>IEICE Transactions on Electronics >A Resistor-Compensation Technique for CMOS Bandgap and Current Reference with Simplified Start-Up Circuit
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A Resistor-Compensation Technique for CMOS Bandgap and Current Reference with Simplified Start-Up Circuit

机译：具有简化启动电路的CMOS带隙和电流基准的电阻补偿技术

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摘要

This paper presents a resistor-compensation technique for a CMOS bandgap and current reference, which utilizes various high positive temperature coefficient (TC) resistors, a two-stage operational transconductance amplifier (OTA) and a simplified start-up circuit in the 0.35-μm CMOS process. In the proposed bandgap and current reference, numerous compensated resistors, which have a high positive temperature coefficient (TC), are added to the parasitic n-p-n and p-n-p bipolar junction transistor devices, to generate a temperature-independent voltage reference and current reference. The measurements verify a current reference of 735.6 nA, the voltage reference of 888.1 mV, and the power consumption of 91.28μW at a supply voltage of 3.3 V. The voltage TC is 49ppm/℃ in the temperature range from 0℃ to 100℃ and 12.8ppm/℃ from 30℃ to 100℃. The current TC is 119.2ppm/℃ at temperatures of 0℃ to 100℃. Measurement results also demonstrate a stable voltage reference at high temperature (> 30℃), and a constant current reference at low temperature (< 70℃).
机译：本文介绍了一种用于CMOS带隙和电流基准的电阻补偿技术，该技术利用各种高正温度系数（TC）电阻，两级运算跨导放大器（OTA）和0.35-μm的简化启动电路CMOS工艺。在拟议的带隙和电流基准中，将具有高正温度系数（TC）的许多补偿电阻添加到寄生n-p-n和p-n-p双极结型晶体管器件中，以生成与温度无关的电压基准和电流基准。这些测量验证了在3.3 V电源电压下的电流基准为735.6 nA，电压基准为888.1 mV，功耗为91.28μW。在0℃至100℃的温度范围内，电压TC为49ppm /℃。从30℃到100℃为12.8ppm /℃。在0℃至100℃的温度下，当前TC为119.2ppm /℃。测量结果还表明，在高温（> 30℃）下电压基准稳定，而在低温（<70℃）下电流基准恒定。

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