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State-of-the-art IV-VI Semiconductor Light-Emitting Devices in Mid-Infrared Opto-Electronic Applications

机译:中红外光电应用中最先进的IV-VI半导体发光器件

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摘要

This paper presents recent developments in the field of lead-salt light-emitting devices, having enormous applications in mid-infrared (MIR) opto-electronics. For the first time, achievement of an electrically excited edge-emitting QW laser on PbSnSe substrate is described. Novel fabrications of freestanding microstruc-tures in the form of rod, tube and pillar, having vast applications in MEMS and NEMS, are reported.
机译:本文介绍了铅盐发光器件领域的最新发展,在中红外(MIR)光电技术中具有巨大的应用。首次描述了在PbSnSe衬底上实现电激发的边缘发射QW激光器的实现。据报道,以杆,管和柱形式的独立式微结构的新颖制造在MEMS和NEMS中具有广泛的应用。

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