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Complete sputtering metallization for high-volume manufacturing

机译：完整的溅射金属化工艺，可进行大批量生产

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In spite of the substantial progress made in the last decade, the GaAs IC industry is still far from reaching the high manufacturing yields established by the Si fabs. High volume applications that target the large consumer electronics market bring a new challenge to the ordinary GaAs manufacturing line and the lure to be more "Si-like" is the motivation for many new process developments. However, adopting Si methods often requires a hard re-thinking of the traditional paradigms established in the early years of GaAs IC processing. By implementing an all-sputtered metallization process in conjunction with CO_2 snow metal lift-off, we believe we overcame one such paradigm. We demonstrate that evaporation is not the only suitable method for lift-off patterning and show that sputtering could represent an attractive alternative. In this paper we will discuss some of the benefits and difficulties that come from using sputtering as the metal deposition method of choice in a high volume GaAs manufacturing line.
机译：尽管在过去的十年中取得了长足的进步，但砷化镓集成电路产业仍远未达到硅晶圆厂建立的高制造良率。针对大型消费电子市场的大批量应用给普通的砷化镓生产线带来了新的挑战，吸引更多“类似硅”的诱惑是许多新工艺开发的动力。但是，采用Si方法通常需要对GaAs IC处理早期建立的传统范例进行重新思考。通过实施全溅射金属化工艺以及CO_2雪花金属的剥离，我们相信我们克服了这样的一个范式。我们证明蒸发不是剥离图形的唯一合适方法，并表明溅射可以代表一种有吸引力的选择。在本文中，我们将讨论在大批量GaAs生产线中使用溅射作为选择的金属沉积方法所带来的一些好处和困难。

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