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首页> 外文期刊>IEEE Transactions on Industrial Electronics >Comparison of the Effects of Nonlinearities for Si MOSFET and GaN E-HEMT Based VSIs
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Comparison of the Effects of Nonlinearities for Si MOSFET and GaN E-HEMT Based VSIs

机译：Si MOSFER和GAN E-HEMT基于VSIS的非线性影响的比较

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摘要

Nonlinearities in voltage source inverters (VSIs) such as; dead time, switching time, delay time, voltage drops on the power switches, parasitic capacitance, etc., are considered to be the main sources of the output voltage distortions. These distortions result in low-order harmonics in the output current, which in turn increase core losses and create torque ripples. In particular, for low-speed applications with low-inductance motors, the control performance and the stability of the system degrades substantially, especially when the system operates in the low-torque region. In this work, the effects of these nonlinearities on the phase current and on the current control of the silicon (Si) metal oxide semiconductor field effect transistor (MOSFET) based VSI are investigated with an air cored low inductance permanent magnet synchronous motor. Furthermore, Gallium nitride (GaN) enhancement mode high electron mobility transistor (E-HEMT) based VSI is proposed to overcome this problem. Next, improvements in the current control process are demonstrated by comparing the experimental results obtained by using GaN E-HEMT and Si MOSFET based VSIs. Results show that GaN E-HEMT based VSI is a better choice for applications, which require a high bandwidth control.
机译：电压源逆变器（VSI）中的非线性，如;电源开关，寄生电容等上的电压下降，电源开关，电压等的电压下降被认为是输出电压失真的主要来源。这些扭曲导致输出电流中的低位谐波，从而增加核心损耗并产生扭矩涟漪。特别地，对于具有低电感电机的低速应用，控制性能和系统的稳定性基本上劣化，特别是当系统在低扭矩区域中操作时。在这项工作中，利用空气芯低电感永磁同步电动机研究了这些非线性对相电流和基于硅（Si）金属氧化物半导体场效应晶体管（MOSFET）的VSI的电流控制的影响。此外，提出了氮化镓（GaN）增强模式的高电子迁移率晶体管（E-HEMT）的VSI以克服这个问题。接下来，通过比较通过使用GaN E-HEMT和SI MOSFET的VSIS获得的实验结果来证明电流控制过程的改进。结果表明，GaN E-HEMT的VSI对于需要高带宽控制的应用是更好的选择。

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