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Electrical properties of semiconductor CdS studied by adsorption spectroscopy

机译:吸附光谱研究半导体CdS的电学性质

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摘要

The electrical conductivity of semiconductor CdS films (d ae 1 mu m) having (0001)S and (0001)Cd polar faces has been measured as a function of temperature at different degrees of adsorption of O-2, NO2, and N2O molecules. Adsorption spectroscopy has been used to identify bulk and surface electronic centers in a series of states with a wide range of ionization energies: E (t) = 0.14-2.21 eV. In contrast to the bulk centers, which have a quasi-continuous energy spectrum characteristic of CdS, the surface adsorption electronic centers have a discrete energy spectrum. The ionization energy of the electronic centers of adsorption origin in CdS + O-2, CdS + NO2, and CdS + N2O structures has been measured for the first time at both polarities of the CdS faces and has been shown to depend on the chemistry of the adsorbate and the polarity of the film face.
机译:在O-2,NO2和N2O分子的不同吸附度下,已测量了具有(0001)S和(0001)Cd极性面的半导体CdS膜(d ae 1μm)的电导率随温度的变化。吸附光谱法已被用于在一系列具有广泛电离能的状态下识别体和表面电子中心:E(t)= 0.14-2.21 eV。与具有CdS的准连续能谱特征的本体中心相反,表面吸附电子中心具有离散的能量谱。首次在CdS面的两个极性上测量了CdS + O-2,CdS + NO2和CdS + N2O结构中的吸附源电子中心的电离能,并已证明其依赖于吸附物和薄膜表面的极性。

著录项

  • 来源
    《Inorganic materials》 |2017年第1期|35-38|共4页
  • 作者单位

    Dagestan State Med Acad, Pl Lenina 1, Makhachkala 367000, Dagestan, Russia;

    Dagestan State Med Acad, Pl Lenina 1, Makhachkala 367000, Dagestan, Russia;

    Dagestan State Med Acad, Pl Lenina 1, Makhachkala 367000, Dagestan, Russia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    adsorption; spectroscopy; bulk centers; surface centers; polar faces;

    机译:吸附;光谱学;本体中心;表面中心;极性面;

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