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Growth of eutectic composites in the InSb-MnSb system

机译：InSb-MnSb体系中共晶复合材料的生长

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摘要

Eutectic composites in the InSb-MnSb system have been grown by the Bridgman method in vertical geometry using a growth charge of eutectic composition. The composites consisted of a [110]-oriented single-crystal InSb matrix and single-crystal MnSb needles aligned in the growth direction. As the solidification rate was raised from 0.5 to 6 mm/h, the length of the needles increased, whereas their diameter dropped from 20 to 4 A mu m. Further raising the solidification rate led to spontaneous crystallization. Characteristically, the electrical and magnetic properties of the eutectic composites in the InSb-MnSb system were found to exhibit large anisotropy. The low-temperature resistivity of the composites across the needles is four to five times that along the needles. With increasing temperature, the resistivity ratio drops by up to a factor of 2-3. This can be accounted for in terms of a geometric factor. The electrical conductivity of the composites is determined primarily by the MnSb phase, whose volume along the growth direction was considerably larger. According to magnetic measurements, the eutectic composites in the InSb-MnSb system are ferromagnets with a Curie temperature of a parts per thousand integral 600 K.
机译：InSb-MnSb系统中的共晶复合材料通过使用共晶成分的增长电荷通过Bridgman方法在垂直几何结构中生长。复合材料由[110]取向的单晶InSb基体和沿生长方向排列的单晶MnSb针组成。随着凝固速率从0.5到6 mm / h的增加，针的长度增加，而针的直径从20 A减小到4A。进一步提高固化速率导致自发结晶。特征在于，发现InSb-MnSb体系中的共晶复合材料的电和磁性能表现出较大的各向异性。复合材料跨针的低温电阻率是沿针的四到五倍。随着温度的升高，电阻率之比下降了2-3倍。这可以用几何因素来解释。复合材料的电导率主要取决于MnSb相，该相沿生长方向的体积很大。根据磁性测量，InSb-MnSb系统中的共晶复合材料是居里温度为千分之600 K的铁磁体。

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  • 来源
    《Inorganic materials》 |2016年第3期|268-273|共6页
  • 作者

    Marenkin S. F.; Kochura A. V.; Fedorchenko I. V.; Izotov A. D.; Vasilev M. G.; Trukhan V. M.; Shelkovaya T. V.; Novodvorsky O. A.; Zheludkevich A. L.;

  • 作者单位

    Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Leninskii Pr 31, Moscow 119991, Russia|Natl Univ Sci & Technol, Moscow Inst Steel & Alloys, Leninskii Pr 4, Moscow 119049, Russia;

    Southwest State Univ, Ul 50 Let Oktyabrya 94, Kursk 305040, Russia;

    Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Leninskii Pr 31, Moscow 119991, Russia|Natl Univ Sci & Technol, Moscow Inst Steel & Alloys, Leninskii Pr 4, Moscow 119049, Russia;

    Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Leninskii Pr 31, Moscow 119991, Russia;

    Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Leninskii Pr 31, Moscow 119991, Russia;

    Belarussian Acad Sci, Sci Pract Mat Res Ctr, Ul Brovki 19, Minsk 220072, Byelarus;

    Belarussian Acad Sci, Sci Pract Mat Res Ctr, Ul Brovki 19, Minsk 220072, Byelarus;

    Russian Acad Sci, Inst Laser & Informat Technol, Svyatoozerskaya Ul 1, Shatura 140700, Moscow Oblast, Russia;

    Belarussian Acad Sci, Sci Pract Mat Res Ctr, Ul Brovki 19, Minsk 220072, Byelarus;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    semiconductor heterostructures; eutectic composites; ferromagnets; spintronics;

    机译：半导体异质结构;共晶复合材料;铁磁体;自旋电子学;

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