Effect of the Line Tension at the Vapor-Liquid-Solid Boundary on the Growth of Silicon Nanocrystals

V. A. Nebolsin; A. I. Dunaev; M. A. Zavalishin

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Effect of the Line Tension at the Vapor-Liquid-Solid Boundary on the Growth of Silicon Nanocrystals

机译：汽液固边界处线张力对硅纳米晶生长的影响

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We examine the thermody namic aspects of the effect of the line tension at a bent vapor-liquid-solid boundary on quasi-one-dimensional growth of silicon nanowires. Experimental data demonstrate that there is a limiting size of solvent nanodrops below which they cannot exist in equilibrium and that there is a limiting nanowire diameter starting at which the increase in line tension with decreasing diameter prevents nanocrystal growth at a given supersaturation.

机译：我们检查了弯曲的气液固边界上线张力对硅纳米线准一维生长的影响的热力学方面。实验数据表明，存在溶剂纳米滴的极限尺寸，在该尺寸以下它们不能平衡存在，并且存在极限纳米线直径，在该直径处，线张力随直径减小而增加会阻止纳米晶在给定的过饱和状态下生长。

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《Inorganic materials》 |2008年第6期|p.559-562|共4页
作者
V. A. Nebolsin; A. I. Dunaev; M. A. Zavalishin;
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作者单位

Voronezh State Technical University, Moskovskii pr. 14, Voronezh, 394026 Russia;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程材料学;
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Effect of the Line Tension at the Vapor-Liquid-Solid Boundary on the Growth of Silicon Nanocrystals

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