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Effect of BiI_3 Doping on the Optical Properties of CaI_2

机译：BiI_3掺杂对CaI_2光学性能的影响

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摘要

The effect of BiI_3, doping on the optical absorption spectra and roentgeno-, photo-, and thermolu-minescence of CaI_2 scintillator crystals has been studied in the temperature range 90-295 K. The crystals were grown by the Bridgman-Stockbarger method. Doping of CaI_2 with BiI_3 from the melt gives rise to absorption bands centered at 466,400, and 350 nm, which can be interpreted as the A, B, and C bands due to electronic transitions from the ~1S_0 state to the ~3P_1, ~3P_2, and ~1P_x levels of a free Bi~(3+) ion. The absorption band at 270-290 nm is assignable to near-activator excitons. Changes in spectral composition and the reduction in luminescence intensity caused by Bi~(3+) doping of CaI_2 are associated mainly with the reabsorption of the emission from centers characteristic of the host by activator centers. Under x-ray excitation, the spectrum of heavily doped crystals shows, in addition, a weak emission centered around 620 nm, which is probably due to an impurity phase. The light sum of CaI_2:Bi~(3+) under x-ray excitation is small and is due to shallow traps. Upon Bi~(3+) substitution on the cation site of CaI_2, the excess charge of the activator is probably compensated by unintentional O~(2-) impurity and vacancy pairs near Bi~(3+) centers-one vacancy in a neighboring cation site and the other in a neighboring anion site.
机译：研究了BiI_3，掺杂对CaI_2闪烁体晶体在90-295 K温度范围内的吸收光谱以及伦琴色，光致和热致发光的影响。该晶体是通过Bridgman-Stockbarger方法生长的。从熔体中用BiI_3掺杂CaI_2会导致集中在466,400和350 nm处的吸收带，由于从〜1S_0态到〜3P_1，〜3P_2的电子跃迁，这可以解释为A，B和C带。以及~~ 1P_x的游离Bi〜（3+）离子。 270-290 nm的吸收带可分配给近活化子激子。 CaI_2的Bi〜（3+）掺杂引起的光谱组成变化和发光强度降低，主要与活化剂中心重新吸收宿主特征中心的发射有关。此外，在X射线激发下，重掺杂晶体的光谱显示出以620 nm为中心的弱发射，这可能是由于杂质相造成的。 CaI_2：Bi〜（3+）在X射线激发下的光之和较小，并且是由于陷阱较浅所致。在CaI_2的阳离子位点上被Bi〜（3+）取代后，活化剂的过量电荷可能被Bi〜（3+）中心附近的无意识O〜（2-）杂质和空位对补偿，相邻位空位中有一个空位。阳离子位点，另一个位于相邻的阴离子位点。

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