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首页> 外文期刊>Inorganic materials >Doping Effect on the Optical, Electro-optic, and Photoconductive Properties of Bi_(12)MO_(20) (M = Ge, Si, Ti)
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Doping Effect on the Optical, Electro-optic, and Photoconductive Properties of Bi_(12)MO_(20) (M = Ge, Si, Ti)

机译：掺杂对Bi_（12）MO_（20）（M = Ge，Si，Ti）的光学，电光和光电导性质的影响

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摘要

The doping effect on the optical, electro-optic, and photoconductive properties of Czochralski-grown Bi_(12)MO_(20) (M = Ge, Si, Ti) sillenite-structure single crystals was studied. The dopants were introduced into the growth charge in the form of oxides. Bi_(12)TiO_(20) crystals were doped with V, Zn, Cu, P, and Nb; and Bi_(12)SiO_(20) crystals were doped with Cd and Mo. The results indicate that the doping level has a significant effect on the photoconductivity of the Bi_(12)TiO_(20) < Zn > , Bi_(12)TiO_(20) < Cu > , Bi_(12)SiO_(20) < Cd > , and Bi_(12)SiO_(20) < Bi_(24)CdMoO_(40) > crystals, which may exceed that of undoped crystals at low doping levels and may be substantially lower than it, down to zero, at increased dopant concentrations. Niobium doping of bismuth titanate has no effect on its photosensitivity and electro-optic properties. Phosphorus and vanadium enhance the photosensitivity of bismuth titanate over the entire composition range studied but have little effect on its electro-optic coefficient r_(41). A slight increase in r_(41) was only observed at high vanadium concentrations. The axial impurity distribution in the crystals is shown to be nonuniform, which reflects in their photoresponse: the photoconductivity of the copper-doped crystals near the seed end is 3 times that near the tail end.
机译：研究了掺杂对切克劳斯基生长的Bi_（12）MO_（20）（M = Ge，Si，Ti）亚硅酸盐结构单晶的光学，电光和光电导性质的影响。将掺杂剂以氧化物的形式引入到生长装料中。 Bi_（12）TiO_（20）晶体中掺杂了V，Zn，Cu，P和Nb。 Cd和Mo掺杂在Bi_（12）SiO_（20）晶体中。结果表明，掺杂水平对Bi_（12）TiO_（20），Bi_（12）TiO_的光电导性有显着影响。 （20），Bi_（12）SiO_（20）和Bi_（12）SiO_（20）晶体，在低掺杂时可能超过未掺杂的晶体在掺杂剂浓度增加的情况下，其水平可能会大大低于它，甚至降低到零。钛酸铋铌的掺杂对其光敏性和电光性质没有影响。磷和钒在所研究的整个组成范围内增强钛酸铋的光敏性，但对其电光系数r_（41）的影响很小。仅在高钒浓度下观察到r_（41）略有增加。晶体中的轴向杂质分布显示为不均匀，这反映了它们的光响应：籽晶端附近的铜掺杂晶体的光电导率是尾端附近的3倍。

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  • 来源
    《Inorganic materials》 |2006年第4期|p.381-392|共12页
  • 作者

    V. I. Chmyrev; V. M. Skorikov; E. V. Larina;

  • 作者单位

    Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, Moscow, 119991 Russia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
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