Phase Composition, Orientation, and Substructure of Iridium Silicide Films on Silicon

V. M. Ievlev; S. B. Kushchev; I. G. Rudneva; S. A. Soldatenko

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Phase Composition, Orientation, and Substructure of Iridium Silicide Films on Silicon

机译：硅上铱硅化物薄膜的相组成，取向和子结构

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The phase composition, orientation, and substructure of iridium silicide films produced by electron-beam evaporation of Ir on (001) and (111) Si at substrate temperatures from 300 to 1000℃ were studied by electron microscopy and diffraction. The results demonstrate that the sequence of silicide formation upon Ir deposition onto heated substrates is the same as upon heat treatment of Ir films deposited at room temperature. It is shown that oriented growth of Ir_3Si_5 and IrSi_(0.7) is possible. The IrSi_3/Si interface is shown to be, to some extent, coherent, with the lattice mismatch being accommodated by dislocations in some directions and by elastic strain in other directions. The likely mechanism for the formation of a dislocation structure at the IrSi_3/Si interlace is discussed.

机译：通过电子显微镜和衍射研究了铱在（001）和（111）Si上电子束蒸发在衬底温度300至1000℃下制备的硅化铱薄膜的相组成，取向和亚结构。结果表明，在Ir沉积到加热的基板上时硅化物形成的顺序与在室温下对Ir膜进行热处理时形成硅化物的顺序相同。结果表明，Ir_3Si_5和IrSi_（0.7）的定向生长是可能的。 IrSi_3 / Si界面显示出一定程度的相干性，晶格失配通过某些方向的位错和其他方向的弹性应变来解决。讨论了在IrSi_3 / Si交错处形成位错结构的可能机理。

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来源
《Inorganic materials》 |2003年第5期|p.472-478|共7页
作者
V. M. Ievlev; S. B. Kushchev; I. G. Rudneva; S. A. Soldatenko;
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作者单位

Voronezh State Technical University, Moskovskii pr. 14, Voronezh, 394026 Russia;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程材料学;
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Phase Composition, Orientation, and Substructure of Iridium Silicide Films on Silicon

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