Growth and Properties of V-Doped Cd_xHg_1-xTe Crystals

S.Yu.Paranchich; Yu.S.Paranchich; M.D.Andriichuk

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Growth and Properties of V-Doped Cd_xHg_1-xTe Crystals

机译：V掺杂Cd_xHg_1-xTe晶体的生长和性能

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摘要

Cd_xHg_1-xTe (x=0.9-0.95) crystals were prepared by two versions of Bridgman growth, and their optical homogeneity and transport properties were studied. The electrical resistivity of the crystals was 10~4 to 10~8 Ω m. From the temperature dependences of the Hall coefficient, the activation energy of the vanadium level in Cd_xHg_1-xTe was determined to be 0.73-0.82 eV.

机译：通过两种形式的Bridgman生长制备Cd_xHg_1-xTe V（x = 0.9-0.95）晶体，并研究了它们的光学均匀性和传输性质。晶体的电阻率为10〜4至10〜8Ωm。根据霍尔系数的温度依赖性，将Cd_xHg_1-xTe 中钒能级的活化能确定为0.73-0.82 eV。

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《Inorganic materials》 |2001年第6期|p.674-676|共3页
作者
S.Yu.Paranchich; Yu.S.Paranchich; M.D.Andriichuk;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
中图分类工程材料学;
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Growth and Properties of V-Doped Cd_xHg_1-xTe Crystals

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