Photoluminescence bands ascribed to nitrogen were observed in the layers prepared by N~+ ion implantation into ZnSe crystals, followed by heat treatment in atomic oxygen or nitrogen. The ionization energy of the shallow donor N_Se was found to be about 105 meV. p-ZnO/p-ZnSe:N-ZnSe structures emitting light at forward biases of >=3 V were prepared. The emission bands in the photo- and electroluminescence spectra were assigned.
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