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首页> 外文期刊>Instrumentation & Measurement Magazine, IEEE >1/f noise in advanced CMOS transistors
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1/f noise in advanced CMOS transistors

机译：先进CMOS晶体管的1 / f噪声

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Complementary metal-oxide-semiconductor (CMOS) technology is dominant in the microelectronics industry for a wide range of applications, including analog, digital, RF, and sensor systems. The advantages of silicon CMOS technology compared to bipolar technology as well as transistors in other semiconductors is well-established. CMOS technology scaling has been a main drive for continuous progress in the silicon based semiconductor industry over the past two decades [1]. The continuous downscaling of CMOS technologies towards nano feature size has increased the performance of integrated circuits considerably. However, one important limitation of MOSFET downscaling is an increase of 1/f noise (often referred to as low-frequency noise), since the 1/f noise increases as the reciprocal of the device area [2], [3]. Furthermore, the development of nano-sized CMOS technologies has led to the observation of random telegraph signals (RTS) [4] yielding large low frequency current fluctuations. Excessive low-frequency noise introduces serious limitations on the functionality of analog and digital circuits since it deteriorates the noise figure of operational amplifiers and A/D and D/A converters. Lowfrequency noise diminishes the signal-to-noise-ratio (SNR) of CMOS sensors, such as IR or CMOS image sensors [5] [6]. The 1/f noise is also of paramount importance in RF circuit applications where it gives rise to phase noise in oscillators or multiplexers [7]. The 1/f noise is a sensitive diagnostic tool to monitor radiation effects on MOSFETs [8].
机译：互补金属氧化物半导体（CMOS）技术在微电子行业中的广泛应用中占主导地位，包括模拟，数字，RF和传感器系统。与双极技术以及其他半导体中的晶体管相比，硅CMOS技术的优势已得到充分确立。在过去的二十年中，CMOS技术的规模化一直是硅基半导体行业持续发展的主要动力[1]。 CMOS技术向纳米特征尺寸不断缩小的规模已大大提高了集成电路的性能。但是，MOSFET缩小的一个重要限制是1 / f噪声（通常称为低频噪声）的增加，因为1 / f噪声随着器件面积的倒数而增加[2]，[3]。此外，纳米级CMOS技术的发展导致对随机电报信号（RTS）的观察[4]产生了很大的低频电流波动。过多的低频噪声对模拟和数字电路的功能造成了严重限制，因为这会降低运算放大器以及A / D和D / A转换器的噪声系数。低频噪声会降低CMOS传感器（如IR或CMOS图像传感器）的信噪比（SNR）[5] [6]。 1 / f噪声在RF电路应用中也至关重要，因为它会在振荡器或多路复用器中引起相位噪声[7]。 1 / f噪声是一种敏感的诊断工具，可以监视MOSFET上的辐射影响[8]。

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