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Hardware trojans in 3-D ICs due to NBTI effects and countermeasure

机译：NBTI效应导致3-D IC中的硬件木马和对策

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摘要

Going vertical as in 3-D IC design, reduces the distance between vertical active silicon dies, allowing more dies to be placed closer to each other. However, putting 2-D IC into three-dimensional structure leads to thermal accumulation due to closer proximity of active silicon layers. Also the top die experiences a longer heat dissipation path. All these contribute to higher and non-uniform temperature variations in 3-D IC; higher temperature exacerbates negative bias temperature instability (NBTI). NBTI degrades CMOS transistor parameters such as delay, drain current and threshold voltage. While the impact of transistor aging is well understood from the device point of view, very little is known about its impact on security. We demonstrated that a hardware intruder could leverage this phenomenon to trigger the payload, without requiring a separate triggering circuit. In this paper we provide a detailed analysis on how tiers of 3-D ICs can be subject to exacerbated NBTI. We proposed to embed threshold voltage extractor circuit in conjunction with a novel NBTI-mitigation scheme as a countermeasure against such anticipated Trojans. We validated through post-layout and Monty Carlo simulations using 45 nm technology that our proposed solution against NMI effects can compensate the NBTI-effects in the 3-D ICs. With the area overhead of 7% implemented in Mod-3 counter, our proposed solution can completely tolerate NBTI-induced degraded threshold voltage shift of up to 60%.
机译：与3-D IC设计中的垂直一样，可以缩短垂直有源硅芯片之间的距离，从而允许更多的芯片彼此靠近放置。但是，将二维IC置于三维结构中会导致热积聚，这是因为有源硅层的距离更近。另外，顶模的散热路径更长。所有这些因素都会导致3-D IC中温度的更高且不一致的变化。较高的温度会加剧负偏压温度不稳定性（NBTI）。 NBTI会降低CMOS晶体管参数，例如延迟，漏极电流和阈值电压。尽管从器件角度已经很好地了解了晶体管老化的影响，但对其安全性的影响知之甚少。我们证明了硬件入侵者可以利用此现象来触发有效负载，而无需单独的触发电路。在本文中，我们提供了有关3-D IC的层级如何受到加剧的NBTI影响的详细分析。我们提出将阈值电压提取器电路与新颖的NBTI缓解方案结合起来作为对此类预期特洛伊木马的对策。我们通过使用45 nm技术进行布局后和Monty Carlo仿真验证，我们针对NMI效应提出的解决方案可以补偿3-D IC中的NBTI效应。通过在Mod-3计数器中实现7％的面积开销，我们提出的解决方案可以完全容忍NBTI引起的退化阈值电压偏移高达60％。

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  • 来源
    《Integration》 |2017年第9期|64-74|共11页
  • 作者

    Mossa Siraj Fulum; Hasan Syed Rafay; Elkeelany Omar;

  • 作者单位

    Tennessee Technol Univ, Dept Elect & Comp Engn, Cookeville, TN 35805 USA;

    Tennessee Technol Univ, Dept Elect & Comp Engn, Cookeville, TN 35805 USA;

    Tennessee Technol Univ, Dept Elect & Comp Engn, Cookeville, TN 35805 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    3-D IC; NBTI; Hardware Trojan;

    机译：3-D IC;NBTI;硬件木马;

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