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首页> 外文期刊>International journal of electrical and power engineering >Modeling of a 6H-SiC MESFET for High-Power and High-Gain Applications
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Modeling of a 6H-SiC MESFET for High-Power and High-Gain Applications

机译：用于高功率和高增益应用的6H-SiC MESFET建模

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摘要

A Monte Carlo simulation has been used to model steady state and transient electron transport in 6H-SiC field effect transistor. The simulated device geometries and doping are matched to the nominal parameters described for the experimental structures as closely as possible and the predicted 1-5 and transfer characteristics for the intrinsic devices show fair agreement with the available experimental data. Simulations of the effect of modulating, the gate bias have also been carried out to test the device response and derived the frequency bandwidth. Value of 90±10 GHz has been derived for the intrinsic current gain cut-off frequency of the 6H-SiC MESFETs.
机译：蒙特卡罗模拟已用于建模6H-SiC场效应晶体管中的稳态和瞬态电子传输。模拟器件的几何形状和掺杂尽可能地与为实验结构描述的标称参数匹配，并且本征器件的预测1-5和传输特性与可用的实验数据完全吻合。还已经对调制，栅极偏置的效果进行了仿真，以测试器件的响应并得出频率带宽。 6H-SiC MESFET的本征电流增益截止频率已得出90±10 GHz的值。

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