Optimization of 2H, 4H and 6H-SiC MESFETs for high-frequency applications

Bertilsson K.; Nilsson HE.

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Optimization of 2H, 4H and 6H-SiC MESFETs for high-frequency applications

机译：为高频应用优化2H，4H和6H-SiC MESFET

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Silicon carbide MESFET devices are well suited for high speed, high power and high temperature electronics due to high saturation velocity, high critical electrical field, good thermal conductivity and large band-gap. Optimization of a high performance device demands a substantial number of numerical simulations, where several different design parameters have to be investigated thoroughly. In this work, we optimize the geometry of lateral MESFETs for maximal unity current-gain frequency (f(T)) using iterative 2-dimensional simulations. We also present a comparison of performance for individually optimized devices, realized with lithographic resolutions ranging from 0.2 to 2 mum in different SiC polytypes. [References: 16]

机译：碳化硅MESFET器件具有高饱和速度，高临界电场，良好的导热性和较大的带隙，因此非常适合于高速，高功率和高温电子设备。高性能设备的优化需要大量的数值模拟，其中必须彻底研究几种不同的设计参数。在这项工作中，我们使用迭代二维仿真为最大单位电流增益频率（f（T））优化了横向MESFET的几何形状。我们还提供了针对单个优化器件的性能比较，该器件在不同SiC多型体中的光刻分辨率范围为0.2到2 mum。 [参考：16]

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《Physica Scripta: An International Journal for Experimental and Theoretical Physics》 |2002年第0期|共3页
作者
Bertilsson K.; Nilsson HE.;
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正文语种 eng
中图分类物理学;
关键词
Monte-carlo simulation; Electron-transport; N-type; Contacts; Carbide; Model;

机译：蒙特卡罗模拟;电子传输;N型;触点;硬质合金;模型;

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1. Optimization of 2H, 4H and 6H-SiC MESFETs for high-frequency applications [J] . Bertilsson K., Nilsson HE. Physica Scripta: An International Journal for Experimental and Theoretical Physics . 2002,第0期

机译：为高频应用优化2H，4H和6H-SiC MESFET
2. Monte Carlo simulation of vertical MESFETs in 2H, 4H and 6H-SiC [J] . K. Bertilsson, E. Dubaric, H-E. Nilsson Diamond and Related Materials . 2001,第3a7期

机译：垂直MESFET在2H，4H和6H-SiC中的蒙特卡罗模拟
3. Monte Carlo simulation of vertical MESFETs in 2H, 4H and 6H-SiC [J] . K. Bertilsson, E. Dubaric, H-E. Nilsson, Diamond and Related Materials . 2001,第3aPta3期

机译：垂直MESFET在2H，4H和6H-SiC中的蒙特卡罗模拟
4. Structural Comparison of the (3 -3 2n) and (3 -3 n) 2H, 4H and 6H Surfaces for Application to the Growth of AlGaN on Off-Axis 4H- and 6H-SiC Substrates [C] . Jones K.A. Electromagnetic Compatibility Symposium Record, 1968 IEEE . -1

机译：（3 -3 2n）和（3 -3 n）2H，4H和6H表面的结构比较，用于在偏轴4H-和6H-SiC衬底上生长AlGaN
5. MESFET Optimization and Innovative Design for High Current Device Applications. [D] . Sochacki, John. 2011

机译：针对大电流设备应用的MESFET优化和创新设计。
6. 2-[(Cyclohex-3-en-1-ylmethoxy)methyl]-6-phenyl-1,2,4-triazine-3,5(2H,4H)-dione [O] . Nasser R. El-Brollosy, Mohamed I. Attia, Ali A. El-Emam, 2015

机译：2-[（环己基-3-en-1-基甲基氧基）甲基] -6-苯基-1,2,4-三嗪-3,5（2H，4H）-二酮
7. Modeling of a 6H-SiC MESFET for High-Power and High-Gain Applications [O] . H. Arabshahi, M. Rezaee Rokn-Abadi 2011

机译：高功率和高增益应用的6H-SIC MESFET的建模

Optimization of 2H, 4H and 6H-SiC MESFETs for high-frequency applications

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