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Analysis of critical thermal issues in 3D integrated circuits

机译:分析3D集成电路中的关键热问题

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Several key attributes of a 3D integrated chip structure are analyzed in this work. Critical features related to the effect of the size of the substrate, heat sink, device layer, through silicon vias (TSVs), thermal interface material (TIM), and the pitch and arrangement of core processors and TSVs as well as variation of thermal conductivity and total heat dissipation and distribution of power within the device layers core processors are investigated in depth. The effects of variation of pertinent features of the 3D integrated circuit (IC) structure on thermal hotspots are established and an optimization route for its reduction is clarified. In addition, a revealing analysis that shows the effect of the number of layers in the 3D structure is presented. Furthermore, the features that have insufficient effect on reduction of thermal hotspots are also established and discussed.
机译:在这项工作中,分析了3D集成芯片结构的几个关键属性。关键特征与基板,散热器,器件层,硅通孔(TSV),热界面材料(TIM)的尺寸,核心处理器和TSV的间距和排列以及导热率的变化有关深入研究了核心处理器在设备层内部的总散热和功率分配。建立了3D集成电路(IC)结构的相关特征变化对热点的影响,并阐明了减少热点的优化途径。此外,还提供了一种揭示分析,该分析显示了3D结构中层数的影响。此外,还建立并讨论了对减少热点没有足够效果的特征。

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