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首页> 外文期刊>Journal of Nanoelectronics and Optoelectronics >Thermally-Aware Modeling and Performance Analysis of Mixed-MWCNTB as Very Large Scale Integrated Interconnects Material for Nano-Electronic Integrated Circuits Design
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Thermally-Aware Modeling and Performance Analysis of Mixed-MWCNTB as Very Large Scale Integrated Interconnects Material for Nano-Electronic Integrated Circuits Design

机译：混合MWCNTB的热敏意识式建模与性能分析为纳米电子集成电路设计的大规模集成互连材料

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This paper presents the performance of thermally-aware Mixed-MWCNTB (MMB) as VLSI interconnects material for nano-scaled technology nodes. A thermally aware multiple conductor circuit (MCC) model of MMB structure as interconnect material for nano-scaled technology nodes has been proposed. From proposed MCC, a thermally aware equivalent single conductor (ESC) model for MMB structure is also presented. The performance in terms of delay and power delay product (PDP) of the proposed MMB structure at a variable temperature range (200-500 K) has been evaluated and analyzed at various technology nodes (32, 22 and 16 nm) for global interconnect length (1000 mu m). Further, the similar analysis has been carried out for copper interconnects and the results are compared with proposed MMB structure. The results indicated that MMB structure offers less resistance as compared to copper interconnects. The comparative analysis shows that with increasing temperature, the various performance parameters such as delay and PDP are also increasing for all the technology nodes. It is revealed from the results that MMB structure presents outstanding performance under variable thermal conditions as compared to copper. As a consequence, the MMB structure can be considered as an alternative to replace the conventional copper as future VLSI interconnect material for high performance nano-electronics integrated circuits design.
机译：本文介绍了热敏感知混合MWCNTB（MMB）作为VLSI互连材料的纳米缩放技术节点的性能。提出了一种作为用于纳米缩放技术节点的互连材料的MMB结构的热意识到多导体电路（MCC）模型。从所提出的MCC，还呈现了MMB结构的热意识到的等效单导体（ESC）模型。在可变温度范围（200-500k）处所提出的MMB结构的延迟和功率延迟产品（PDP）的性能已经在全球互连长度的各种技术节点（32,22和16nm）上进行评估和分析。 （1000 mu m）。此外，已经对铜互连进行了类似的分析，并将结果与​​提出的MMB结构进行比较。结果表明，与铜互连相比，MMB结构具有较少的阻力。对比分析表明，随着温度的增加，诸如延迟和PDP的各种性能参数也在增加所有技术节点。从与铜相比，MMB结构在可变热条件下具有出色的性能，揭示了结果。结果，MMB结构可以被认为是更换传统铜的替代方案，作为用于高性能纳米电子集成电路设计的未来VLSI互连材料。

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