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A Monte Carlo simulation for phonon transport within silicon structures at nanoscales with heat generation

机译:蒙特卡罗模拟声子在纳米结构中随着生热在声子中的迁移

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摘要

Nanoscale phonon transport within silicon structures subjected to internal heat generation was explored. A Monte Carlo simulation was used. The simulation procedures differed from the current existing methods in which phonons below a predefined "reference temperature" were not accounted to reduce memory storage and computational resources. Results indicated that the heat diffusion equation significantly underestimates temperature distribution at nanoscales in the presence of an external heat source. Discussions on temperature distribution inside silicon thin film when heated by a pulsed laser, an electron beam or due to near-field thermal radiation effects were also provided.
机译:探索了内部产生热量的硅结构内纳米尺度声子的传输。使用了蒙特卡洛模拟。模拟程序与当前的现有方法不同,在现有方法中,未考虑低于预定义“参考温度”的声子以减少存储器存储和计算资源。结果表明,在存在外部热源的情况下,热扩散方程显着低估了纳米级的温度分布。还讨论了当通过脉冲激光,电子束或由于近场热辐射效应而加热时,硅薄膜内部的温度分布。

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