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首页> 外文期刊>International Journal of Heat and Mass Transfer >Device Scaling Effect On The Spectral-directional Absorptance Of Wafer's Front Side
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Device Scaling Effect On The Spectral-directional Absorptance Of Wafer's Front Side

机译：器件缩放对晶圆正面光谱吸收率的影响

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摘要

Nonuniform absorption of thermal radiation in the rapid thermal processing of wafers is a critical problem facing the semiconductor industry. This paper presents a parametric study of the radiative properties of patterned wafers with the smallest feature dimension down to 10 nm, considering the effects of temperature, wavelength, and angle of incidence. Various gate and trench sizes and their dimensions relative to the period are used in examining the effect of device scaling on the spectral-directional absorptance via numerical solutions of the Maxwell equations. In the cases with trench size variation, the resonance cavity effect may increase the absorptance as the trench width increases. In the cases with trench size increases at several different filling ratios, the absorptance does not change much at small filling ratio. Wood's anomaly appears in the directional-hemispherical absorptance with gates on top of silicon substrate.
机译：在晶片的快速热处理中热辐射的不均匀吸收是半导体工业面临的关键问题。本文考虑到温度，波长和入射角的影响，对最小特征尺寸低至10 nm的图案化晶片的辐射特性进行了参数研究。通过Maxwell方程的数值解，使用各种栅极和沟槽尺寸及其相对于周期的尺寸来检查器件缩放对光谱方向吸收率的影响。在沟槽尺寸变化的情况下，随着沟槽宽度的增加，谐振腔效应可能会增加吸收率。在几种不同的填充率下沟槽尺寸增加的情况下，在较小的填充率下吸收率变化不大。 Wood的异常现象出现在定向半球吸收率中，并且栅极位于硅衬底的顶部。

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