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首页> 外文期刊>International journal of infomation technology and management >Microstructure simulation in isothermal chemical vapour infiltration of SiC composites
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Microstructure simulation in isothermal chemical vapour infiltration of SiC composites

机译：SiC复合材料等温化学气相渗透的微观组织模拟

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In this study, a multiphase field model for isothermal chemical vapour infiltration (ICVI) process of SiC composites from methyltrichlorosilane (MTS) is developed. The model consists of a set of non-linear partial differential equations by coupling Ginzburg-Landau type phase field equations with convection diffusion type mass balance equations and Navier-Stokes equations for fluid flow. In order to incorporate the thermodynamics of the pyrolysis of MTS into phase field model framework, the reduced chemical reaction mechanism is adopted. The microstructure of preferential deposition of Si, SiC under high ratio of H_2 to MTS is simulated and the result is in good agreement with the investigation. The potential risk of blockage of the premature pores during ICVI process is predicted. The competitive growth mechanism of SiC grains is discussed.
机译：在这项研究中，建立了多相场模型，用于等温化学气相渗透（ICVI）过程中的甲基三氯硅烷（MTS）SiC复合材料。该模型由一组非线性偏微分方程组组成，该方程组将Ginzburg-Landau型相场方程与对流扩散型质量平衡方程和Navier-Stokes方程耦合用于流体流动。为了将MTS热解的热力学纳入相场模型框架，采用了简化的化学反应机理。模拟了H_2与MTS的高比例下Si，SiC优先沉积的微观结构，与研究结果吻合良好。可以预测ICVI过程中过早堵塞毛孔的潜在风险。讨论了SiC晶粒的竞争生长机理。

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