Theoretical analysis of GaSb/GaAs QWIP

Aref Billaha; Mukul K. Das

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Theoretical analysis of GaSb/GaAs QWIP

机译：GaSb / GaAs QWIP的理论分析

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摘要

This paper investigates a theoretical analysis of the inter-subband transition GaSb/GaAs quantum well infrared photodetector (QWIP) considering large valence band discontinuity. Performance parameters such as Eigen energy states, absorption coefficient as well as responsivity are obtained for bound to bound inter-subband transition of QWIP. The confinement energies for the first heavy- and light-hole states are obtained as 0.1718 eV and 0.4329 eV, respectively. A broad detection window of 2 to 5 urn with peak responsivity of about 53.8 μA/W at wavelength of 2.7 μm is obtained at 5 V bias voltage.

机译：本文研究了考虑大价带不连续性的子带间跃迁GaSb / GaAs量子阱红外光电探测器（QWIP）的理论分析。对于绑定到绑定的QWIP子带间跃迁，获得了诸如本征能态，吸收系数以及响应度之类的性能参数。获得的第一重空穴和轻空穴状态的限制能分别为0.1718 eV和0.4329 eV。在5 V偏置电压下，可获得2至5 um的宽检测窗口，在2.7μm的波长下峰值响应度约为53.8μA/ W。

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来源
《International Journal of Materials Engineering Innovation》 |2014年第3期|238-246|共9页
作者
Aref Billaha; Mukul K. Das;
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作者单位

Department of Electronics Engineering,Indian School of Mines,Dhanbad-826004, Jharkhand, India;

Department of Electronics Engineering,Indian School of Mines,Dhanbad-826004, Jharkhand, India;

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正文语种 eng
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intersubband transition; quantum well; absorption; responsivity; GaSb/GaAs material;

机译：子带间过渡;量子阱吸收响应能力GaSb / GaAs材料;

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专利

1. Performance analysis of AIGaAs/GaAs/InGaAs-based asymmetric long-wavelength QWIP [J] . Billaha Md. Aref, Das Mukul K. Applied Physics . 2019,第7期

机译：基于AIGaAs / GaAs / InGaAs的不对称长波长QWIP的性能分析
2. Performance analysis of AIGaAs/GaAs/InGaAs-based asymmetric long-wavelength QWIP [J] . Billaha Md. Aref, Das Mukul K. Applied Physics . 2019,第7期

机译：基于AIGAAS / GAAS / INGAAS的非对称长波长QWIP的性能分析
3. Photosensitivity of pSin(GaSb)1- x - y(Si2)x(GaAs)y, pSin(GaSb)1- x - y(Si2)x(GaAs)y,n(GaSb) Structures [J] . A S Saidov M S Saidov Sh N Usmonov D Saparov K T Kholikov Applied Solar Energy . 2008,第3期

机译：pSin（GaSb）1-x-y（Si2）x（GaAs）y，pSin（GaSb）1-x-y（Si2）x（GaAs）y，n（GaSb）结构的光敏性
4. Single-junction GaSb and tandem GaSb/InGaAsSb AlGaAsSb/GaSb thermophotovoltaic cells [C] . Andreev, V.M., Khvostikov, . 2000

机译：单结GaSb和串联式GaSb / InGaAsSb和AlGaAsSb / GaSb热光电电池
5. Reducing Threading Dislocation in GaSb Epilayer Grown on GaAs Substrate for Photovoltaic and Thermophotovoltaic Application [D] . Mansoori, Ahmad. 2019

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6. Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations [O] . A Jallipalli, G Balakrishnan, SH Huang, 2009

机译：具有周期性90°错配位错界面阵列的GaAs衬底上生长的高弛豫GaSb的结构分析
7. Characterization of 6.1 Å III-V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy [O] . Craig Adam, Carrington Peter James, Liu Huiyun, 2016

机译：GaAs和Si上生长的6.1ÅIII-V材料的特性：GaSb / GaAs外延和GaSb / AlSb / Si外延的比较
8. Multi-Band GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Arrays [R] . Bandara, S. V. , Gunapala, S. D. , Liu, J. K. , 2002

机译：多波段Gaas / alGaas量子阱红外光电探测器（QWIp）焦平面阵列

Theoretical analysis of GaSb/GaAs QWIP

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