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首页> 外文期刊>International Journal of Microwave and Wireless Technologies >Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs
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Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs

机译：AlGaN / GaN HEMT中的漏极电流瞬态和低频色散特性

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摘要

This paper presents a detailed trap investigation based on combined pulsed I/V measurements, drain current transient (DCT) measurements and low-frequency dispersion measurements of transconductance (LF Y-21) and output conductance (LF Y-22). DCT characterization is carried out over a 7-decade time scale. LF Y-21 and Y-22 measurements are carried out over the frequency range from 100 Hz to 1 GHz. These combined measurements were performed at several temperatures for AlGaN/GaN high electron mobility transistors under class AB bias condition and allowed the extraction of the activation energy (E-a) and the capture cross section (sigma(c)) of the identified traps. Extensive measurements of these characteristics as a function of device bias are reported in this work to understand the dynamic trap behavior. This paper demonstrated a correlation between LF small-signal (LF Y-21 and Y-22) and large-signal voltage steps (DCT) results. These measurements allow identifying the same 0.64 eV deep level, attributed to a native defect of GaN, possibly located in the buffer layer.
机译：本文基于组合的脉冲I / V测量，漏极电流瞬变（DCT）测量以及跨导（LF Y-21）和输出电导（LF Y-22）的低频色散测量，提供了详细的陷阱研究。 DCT表征是在7年的时间范围内进行的。在100 Hz至1 GHz的频率范围内进行LF Y-21和Y-22测量。这些组合的测量是在AB类偏置条件下在几个温度下对AlGaN / GaN高电子迁移率晶体管进行的，并允许提取已识别陷阱的激活能（E-a）和捕获截面（sigma（c））。为了了解动态陷阱行为，在这项工作中报告了这些特性作为器件偏置的函数的广泛测量结果。本文证明了LF小信号（LF Y-21和Y-22）与大信号电压阶跃（DCT）结果之间的相关性。这些测量值可以识别出可能归因于GaN的天然缺陷（可能位于缓冲层中）的0.64 eV深度。

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