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首页> 外文期刊>International Journal of Microwave and Wireless Technologies >Wideband, high-efficiency, high-power GaN amplifiers, using MIC and quasi-MMIC technologies, in the 1-4 GHz range
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Wideband, high-efficiency, high-power GaN amplifiers, using MIC and quasi-MMIC technologies, in the 1-4 GHz range

机译：使用MIC和准MMIC技术的1-4 GHz范围内的宽带，高效率，高功率GaN放大器

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摘要

In this paper, the designs and experimental performances of wideband (higher than one octave) high-efficiency, high-power amplifiers (HPA) working in the 1-4 GHz range, using the same GaN process, are presented. They are based on the Bode-Fano integrals, which can be applied to a trade-off calculation between bandwidth and efficiency. Firstly, an microwave intre-grated circuits (MIC) wideband HPA, externally matched, is presented. It generates a continuous wave (CW) output power (P_(out)) greater than 40 W, a power gain (G_p) higher than 9.2 dB and a corresponding power added efficiency (PAE) (drain efficiency (DE)) ranged between 36 and 44% (40 and 48%) over the 1-3 GHz bandwidth. Two other amplifiers have been designed upon the same theoretical methodology, with a passive GaAs MMIC circuit technology, enabling to reduce the final size down to 420 mm~2. The first internally matched Quasi monolithic microwave intergrated circuits (Quasi-MMIC) single-ended HPA generates a pulsed P_(out) greater than 25 W, G_P higher than 9.8 dB, and a corresponding PAE (DE) ranged between 37 and 52.5% (40 and 55%) over the 2-4 GHz bandwidth. The second internally matched Quasi-MMIC HPA, based on balanced architecture, generates a pulsed P_(out) higher than 45 W, G_P higher than 9.5 dB and PAE (DE) ranged between 33 and 44% (38 and 50%) over the 2-4 GHz bandwidth. These results are among the best ones published in terms of PAE and P_(out) in instantaneous octave bandwidth in the 1-4 GHz frequency range.
机译：本文介绍了使用相同的GaN工艺在1-4 GHz范围内工作的宽带（高于一个八度音阶）高效，高功率放大器（HPA）的设计和实验性能。它们基于Bode-Fano积分，可用于带宽和效率之间的折衷计算。首先，提出了一种外部匹配的微波集成电路（MIC）宽带HPA。它产生的连续波（CW）输出功率（P_（out））大于40 W，功率增益（G_p）大于9.2 dB，相应的功率附加效率（PAE）（漏极效率（DE））介于36之间和1-3 GHz带宽上的44％（分别为40％和48％）。另外两个放大器是采用相同的理论方法设计的，并采用了无源GaAs MMIC电路技术，可将最终尺寸减小至420 mm〜2。第一个内部匹配的准单片微波集成电路（Quasi-MMIC）单端HPA产生的脉冲P_（out）大于25 W，G_P大于9.8 dB，相应的PAE（DE）介于37％至52.5％之间（ 40％和55％）。第二个内部匹配的准MMIC HPA基于平衡架构，产生高于45 W的脉冲P_（out），高于9.5 dB的G_P和PAE（DE）范围为33％至44％（38％至50％）。 2-4 GHz带宽。这些结果是在1-4 GHz频率范围内的瞬时倍频程带宽上的PAE和P_（out）方面最好的结果之一。

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