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首页> 外文期刊>International Journal of Microwave and Wireless Technologies >GaN-based single-chip frontend for next-generation X-band AESA systems
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GaN-based single-chip frontend for next-generation X-band AESA systems

机译：下一代X波段AESA系统的基于GaN的单芯片前端

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摘要

A next generation of active electronically scanned array (AESA) antennas will be challenged with the need for lower size, weight, power, and cost. This leads to enhanced demands especially with regard to the integration density of the radio frequency-part inside a T/R module. The semiconductor material GaN has proven its capacity for high-power amplifiers (HPA), robust receive components as well as switch components for separation of transmit and receive mode. This paper will describe the design and measurement results of a GaN-based single-chip T/R module frontend (HPA, low noise anplifier, and single-pole double-throw (SPDT)) using UMS GH25 technology and covering the frequency range from 8 GHz to 12 GHz. The key performance parameters of the frontend are 13 W minimum transmit (TX) output power over the whole frequency range with peak power up to 17 W. The frontend in receive (RX) mode has a noise figure below 3.2 dB over the whole frequency range, and can survive more than 5 W input power. The large signal insertion loss of the used SPDT is below 0.9 dB at 43 dBm input power level.
机译：下一代有源电子扫描阵列（AESA）天线将面临对更低尺寸，重量，功率和成本的需求。这导致尤其在T / R模块内部的射频部分的集成密度方面的需求增加。半导体材料GaN已证明其具有用于大功率放大器（HPA），坚固的接收组件以及用于分离发射和接收模式的开关组件的能力。本文将介绍使用UMS GH25技术的GaN基单芯片T / R模块前端（HPA，低噪声放大器和单刀双掷（SPDT））的设计和测量结果，涵盖的频率范围为8 GHz至12 GHz。前端的关键性能参数是整个频率范围内的13 W最小发射（TX）输出功率，峰值功率高达17W。接收（RX）模式下的前端在整个频率范围内的噪声系数低于3.2 dB ，并且可以承受超过5 W的输入功率。在43 dBm输入功率水平下，所用SPDT的大信号插入损耗低于0.9 dB。

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