...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Solid-State Circuits, IEEE Journal of >A 61-GHz SiGe Transceiver Frontend for Energy and Data Transmission of Passive RFID Single-Chip Tags With Integrated Antennas
【24h】

A 61-GHz SiGe Transceiver Frontend for Energy and Data Transmission of Passive RFID Single-Chip Tags With Integrated Antennas

机译：用于集成天线的无源RFID单芯片标签的能量和数据传输的61 GHz SiGe收发器前端

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This paper presents SiGe-based transmitter and receiver chips for a radio frequency identification (RFID) frontend in the 61-GHz industrial, scientific, and medical (ISM) frequency band. The chips are fabricated in a modern 130-nm SiGe BiCMOS technology with HBTs offering ann$f_{T}$nof 250 GHz andn$f_{mathrm{max}}$nof 370 GHz. The presented transmitter consists of a fundamental voltage-controlled oscillator (VCO), a power amplifier (PA), lumped element Wilkinson power dividers, and a static divide-by-16 chain for stabilization within a phase-locked loop (PLL). Two variants of the transmitter are fabricated with supply voltages of 3.3 and 5 V, respectively. The transmitters are designed to provide an efficient signal source to supply a passive RFID tag with the maximum allowed 20-dBm effective isotropic radiated power (EIRP) for short-range devices. The 3.3-V transmitter chip achieves a peak output power of 17 dBm, PAEnPAnof 18.6% and dc-to-RF efficiency of 12.9% (excluding the divider). At 61 GHz, a phase noise of −102 dBc/Hz at 1 MHz offset is achieved. The power consumption for the 5- and 3.3-V transmitter chips is 710 and 482 mW, respectively. The receiver chip is implemented as two Gilbert cell mixers in-phase quadrature configuration to compensate for destructive interference that may be caused by varying distance between reader and tag.
机译：本文介绍了基于SiGe的发送器和接收器芯片，用于61 GHz工业，科学和医学（ISM）频段的射频识别（RFID）前端。该芯片采用具有HBT的现代130纳米SiGe BiCMOS技术制造，可提供ann $ f_ {T} $ nof 250 GHz andn $ f_ {mathrm {max}} $ n 370 GHz。提出的变送器包括一个基本压控振荡器（VCO），一个功率放大器（PA），集总元件Wilkinson功率分配器和一个静态16分频链，用于在锁相环（PLL）内实现稳定。变送器的两个变体分别采用3.3 V和5 V的供电电压制造。发射器旨在提供有效的信号源，为无源RFID标签提供短距离设备允许的最大20dBm有效各向同性辐射功率（EIRP）。 3.3 V发射器芯片可实现17 dBm的峰值输出功率，PAEn PAn为18.6％，DC-RF效率为12.9％（不包括分压器）。在61 GHz处，在1 MHz偏移处实现了-102 dBc / Hz的相位噪声。 5 V和3.3 V发送器芯片的功耗分别为710 mW和482 mW。接收器芯片被实现为两个吉尔伯特单元混频器同相正交配置，以补偿由读取器和标签之间的距离变化引起的破坏性干扰。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号