Design and characterization of a 6-18 GHz GaN on SiC high-power amplifier MMIC for electronic warfare

Oreja Gigorro Eduardo; Delgado Pascual Emilio; Sanchez Martinez Juan Jose; Gil Heras Maria Luz; Bueno Fernandez Virginia; Bodalo Marquez Antonio; Grajal Jesus

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Design and characterization of a 6-18 GHz GaN on SiC high-power amplifier MMIC for electronic warfare

机译：用于电子战的SiC大功率放大器MMIC上的6-18 GHz GaN的设计与表征

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A 6-18 GHz high-power amplifier (HPA) design in GaN on SiC technology is presented. This power amplifier consists of a two-stage corporate amplifier with two and four transistors, respectively. It has been fabricated on UMS using their 0.25 mu m gate length process, GH25. A study of the suitable attachment method and measurement on wafer and on jig are detailed. This HPA exhibits an averaged output power of 39.2 dBm with a mean gain of 11 dB in saturation and a 24.5% maximum power added efficiency in pulse mode operation with a duty cycle of 10% with a 25 mu s pulse width.

机译：提出了一种基于SiC技术的GaN中的6-18 GHz高功率放大器（HPA）设计。该功率放大器由两级企业放大器组成，分别具有两个和四个晶体管。它是使用UMS的0.25微米栅长工艺GH25制成的。详细研究了在晶片和夹具上合适的附着方法和测量。该HPA的平均输出功率为39.2 dBm，饱和时平均增益为11 dB，在脉冲模式下的占空比为10％，脉冲宽度为25 s时，最大功率附加效率为24.5％。

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来源
《International Journal of Microwave and Wireless Technologies》 |2019年第7期|625-634|共10页
作者
Oreja Gigorro Eduardo; Delgado Pascual Emilio; Sanchez Martinez Juan Jose; Gil Heras Maria Luz; Bueno Fernandez Virginia; Bodalo Marquez Antonio; Grajal Jesus;
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作者单位

Indra Sistemas SA Ctra Loeches 9 Torrejon De Ardoz 28850 Spain;

Univ Politecn Madrid Informat Proc & Telecommun Ctr Av Complutense 30 E-28040 Madrid Spain;

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正文语种 eng
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Broadband amplifiers; high power amplifiers; microwave amplifiers; MMICs;

机译：宽带放大器;大功率放大器;微波放大器MMIC;

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专利

1. 6-18 GHz Reactive Matched GaN MMIC Power Amplifiers with Distributed L-C Load Matching [J] . Jihoon Kim, Kwangseok Choi, Sangho Lee, Journal of the Korean Institute of Electromagnetic Engineering and Science . 2016,第1期

机译：具有分布式L-C负载匹配的6-18 GHz无功匹配GaN MMIC功率放大器
2. Wideband, high-efficiency, high-power GaN amplifiers, using MIC and quasi-MMIC technologies, in the 1-4 GHz range [J] . CHAMSSEDINE BERRACHED, DIANE BOUW, MARC CAMIADE, International Journal of Microwave and Wireless Technologies . 2015,第1期

机译：使用MIC和准MMIC技术的1-4 GHz范围内的宽带，高效率，高功率GaN放大器
3. 3–20-GHz GaN MMIC Power Amplifier Design Through a COUT Compensation Strategy [J] . Moreno Rubio Jorge Julian, Quaglia Roberto, Piacibello Anna, IEEE microwave and wireless components letters . 2021,第5期

机译：3-20-GHz GAN MMIC功率放大器设计通过COUT补偿策略
4. A 6–18 GHz GaN on SiC High Power Amplifier MMIC for Electronic Warfare [C] . Eduardo Oreja-Gigorro, Emilio Delgado Pascual, Juan José Sánchez-Martínez, European Microwave Integrated Circuits Conference . 2018

机译：用于电子战的SiC大功率放大器MMIC上的6–18 GHz GaN
5. A 3.6 GHz Doherty Power Amplifier with a 40 dBm Saturated Output Power using GaN on SiC HEMT Devices. [D] . Baker, Bryant. 2014

机译：使用SiC HEMT器件上的GaN的3.6 GHz Doherty功率放大器，其饱和输出功率为40 dBm。
6. Compact 20-W GaN Internally Matched Power Amplifier for 2.5 GHz to 6 GHz Jammer Systems [O] . Min-Pyo Lee, Seil Kim, Sung-June Hong, 2020

机译：适用于2.5 GHz至6 GHz干扰器系统的紧凑型20W GaN内部匹配功率放大器
7. Design and characterization of a 6–18 GHz GaN on SiC high-power amplifier MMIC for electronic warfare [O] . Eduardo Oreja Gigorro, Emilio Delgado Pascual, Juan José Sánchez Martínez, 2019

机译：6-18 GHz GAN在电子战中SIC高功率放大器MMIC的设计与鉴定

Design and characterization of a 6-18 GHz GaN on SiC high-power amplifier MMIC for electronic warfare

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