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首页> 外文期刊>International Journal of Numerical Modelling >A parallel implementation of a two-dimensional hydrodynamic model for microwave semiconductor device including inertia effects in momentum relaxation
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A parallel implementation of a two-dimensional hydrodynamic model for microwave semiconductor device including inertia effects in momentum relaxation

机译：微波半导体器件二维流体动力学模型的并行实现，包括动量松弛中的惯性效应

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摘要

A self-consistent numerical transport model based on the hydrodynamic equations obtained from Boltzmann's transport equation (BTE) is presented. The model includes both the temporal and spatial variation in electron velocity. A parallel implementation of the solution method, using FDTD techniques, is illustrated. Numerical results for a GaAs MESFET device are generated using this complete hydrodynamic model (CHM) and compared with results obtained from the more commonly used energy or simplified hydrodynamic model (SHM). The results indicate that for short gate-lengths (less than 0.5 μm) the two models lead to different DC steady-state results which in turn lead to different microwave small-signal models for the device.
机译：基于从玻尔兹曼输运方程（BTE）获得的流体动力学方程，提出了一个自洽的数值输运模型。该模型包括电子速度的时间和空间变化。说明了使用FDTD技术的解决方案方法的并行实现。使用此完整的水动力模型（CHM）生成GaAs MESFET器件的数值结果，并将其与从更常用的能量或简化的水动力模型（SHM）获得的结果进行比较。结果表明，对于较短的栅极长度（小于0.5μm），这两种模型导致不同的DC稳态结果，进而导致该器件的微波微信号模型不同。

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