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首页> 外文期刊>International journal of numerical modelling >Impact of source pocket doping on RF and linearity performance of a cylindrical gate tunnel FET
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Impact of source pocket doping on RF and linearity performance of a cylindrical gate tunnel FET

机译：源极口袋掺杂对圆柱形栅极隧道FET的RF和线性性能的影响

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摘要

The paper presents a cylindrical gate tunnel (CGT) field effect transistors (FETs) with a highly doped pocket layer introduced in the source region. The presence of pocket doped layer in the source provides higher lateral electric field and band-to-band tunneling (BTBT) generation rate in the vicinity of tunneling junction which in turn increases the drain current and transconductance significantly. Also, the linearity and radio frequency (RF) performance of the CGT FET with source pocket doping (CGTS) have been extensively investigated. The different linearity and RF figure of merits such as g(mn), VIP2, VIP3, IIP3, ZCP, 1-dB compression point, GBWP, TFP, unity gain cut-off frequency, and maximum oscillation frequency of the present device are extracted and compared with the results of conventional CGT. The results exhibit superior linearity and RF performance along with improved current carrying capability of the proposed device. Thus, the device can be one of the possible contenders to replace bulk MOSFET in high-frequency microwave applications. The accuracy of both the devices is validated by TCAD Sentaurus simulator.
机译：本文提出了一种圆柱形的栅极隧道（CGT）场效应晶体管（FET），在源区中引入了高掺杂的口袋层。源极中存在的袋状掺杂层在隧道结附近提供了更高的横向电场和带对隧道（BTBT）生成速率，这反过来又大大增加了漏极电流和跨导。同样，已经广泛研究了带有源袋掺杂（CGTS）的CGT FET的线性和射频（RF）性能。提取了g（mn），VIP2，VIP3，IIP3，ZCP，1-dB压缩点，GBWP，TFP，单位增益截止频率和最大振荡频率等不同线性度和品质因数并与常规CGT的结果进行了比较。结果显示出优异的线性度和RF性能，并改善了拟议器件的载流能力。因此，该器件可能是在高频微波应用中替代大体积MOSFET的可能竞争者之一。两种设备的精度均已通过TCAD Sentaurus模拟器验证。

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