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首页> 外文期刊>International journal of numerical modelling >Analysis of the RF and noise performance of junctionless MOSFETs using Monte Carlo simulation
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Analysis of the RF and noise performance of junctionless MOSFETs using Monte Carlo simulation

机译：使用蒙特卡洛模拟分析无结MOSFET的RF和噪声性能

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摘要

The dynamic characteristics and high-frequency noise performance of junctionless (JL) metal-oxide-semiconductor field-effect transistors (MOSFETs) are investigated using a full-band Monte Carlo simulator. A detailed comparison with conventional inversion mode (IM) MOSFETs is presented. The results of the radio frequency performance indicate that, compared with the traditional IM MOSFET, the JL transistor exhibits lower drain current (Ids), transconductance (gm), and cut-off frequency (ft) because of its lower electron velocity in the high doping channel. However, owing to a reduced output conductance (gds) and a larger Cgs/Cgd ratio (Cgs is the gate-to-source capacitance; Cgd is the gate-to-drain capacitance), the JL MOSFET presents an improvement in the intrinsic voltage gain (Avo) and maximum frequency of oscillation (fmax) in comparison with the IM transistor, which makes it be a viable option for the high-voltage and power gain analog/radio frequency applications. The results of the noise characteristics show that the JL MOSFET exhibits higher minimum noise figure (NFmin) and equivalent noise resistance (Rn), indicating an inferior noise performance. Copyright © 2013 John Wiley & Sons, Ltd.
机译：使用全频带蒙特卡罗仿真器研究了无结（JL）金属氧化物半导体场效应晶体管（MOSFET）的动态特性和高频噪声性能。提出了与常规反相模式（IM）MOSFET的详细比较。射频性能的结果表明，与传统的IM MOSFET相比，JL晶体管具有较低的漏极电流（Ids），跨导（gm）和截止频率（ft），这是因为其高电子速度较低。掺杂通道。但是，由于降低了输出电导（gds）和提高了Cgs / Cgd的比率（Cgs是栅极至源极电容； Cgd是栅极至漏极电容），JL MOSFET改善了本征电压与IM晶体管相比，它具有更高的增益（Avo）和最大振荡频率（fmax），这使其成为高压和功率增益模拟/射频应用的可行选择。噪声特性的结果表明，JL MOSFET的最小噪声指数（NFmin）和等效噪声电阻（Rn）更高，表明噪声性能较差。版权所有©2013 John Wiley＆Sons，Ltd.

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