Optical, electrical and thermal analysis of GaN semiconductor lasers

Gen-ichi Hatakoshi; Masaaki Onomura; Masayuki Ishikawa

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Optical, electrical and thermal analysis of GaN semiconductor lasers

机译：GaN半导体激光器的光，电和热分析

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Device characteristics of GaN-based semiconductor lasers have been analysed by numerical calculation. Anti-guide-like behaviour of the waveguide mode appears in InGaN laser structures where the cladding Layers have insufficient thickness. Such phenomena are peculiar to laser structures with GaN material Systems. The layer structure should be designed so as to suppress the anti-guide mode.

机译：通过数值计算分析了GaN基半导体激光器的器件特性。在包覆层厚度不足的InGaN激光器结构中，出现了波导模式的类似反向导的行为。这种现象是使用GaN材料系统的激光结构所特有的。应该设计层结构以便抑制反引导模式。

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《International journal of numerical modelling》 |2001年第4期|p.303-323|共21页
作者
Gen-ichi Hatakoshi; Masaaki Onomura; Masayuki Ishikawa;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类电工技术;
关键词
device simulation; semiconductor laser; GaN;

机译：设备仿真;半导体激光器氮化镓;

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Optical, electrical and thermal analysis of GaN semiconductor lasers

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