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首页> 外文期刊>International journal of RF and microwave computer-aided engineering >In-Deep Insight into the Extrinsic Capacitance Impact on GaN HEMT Modeling at Millimeter-Wave Band
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In-Deep Insight into the Extrinsic Capacitance Impact on GaN HEMT Modeling at Millimeter-Wave Band

机译：深入了解外部电容对毫米波波段GaN HEMT建模的影响

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The extrinsic input and output capacitances of the Held effect transistor small-signal equivalent circuit are typically extracted from the low frequency admittance parameters under "cold" pinch-off condition. Despite that, these two capacitances play a significant role also at high frequencies. Intuitively, a first hint of explanation stems from the high frequency reduction of their admittance values connected in parallel to the input and the output of the rest of the equivalent circuit. In particular, the extrinsic capacitances can cause an increase of the real parts of the impedance parameters at high frequencies. This article is aimed at developing an extensive experimental and mathematical analysis based on a comparative study of this behavior for GaN high electron mobility transistor (HEMT) devices up to the millimeter-wave range. The results of this analysis can be applied for estimating the extrinsic capacitances. The main benefit of this modeling technique is that the extrinsic output capacitance can be separated from the intrinsic output capacitance, which can play a significant role especially in case of large devices.
机译：保持效应晶体管小信号等效电路的外部输入和输出电容通常是在“冷”夹断条件下从低频导纳参数中提取的。尽管如此，这两个电容在高频下也起着重要作用。直观上，第一个解释提示是其导纳值与等效电路其余部分的输入和输出并联连接的高频降低。特别是，外部电容会导致高频下阻抗参数的实部增加。本文旨在基于对毫米波范围以内的GaN高电子迁移率晶体管（HEMT）器件的这种行为的比较研究，开发广泛的实验和数学分析。该分析的结果可用于估计外部电容。这种建模技术的主要好处是可以将外部输出电容与本征输出电容分开，特别是在大型设备中，这可以发挥重要作用。

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