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首页> 外文期刊>International journal of RF and microwave computer-aided engineering >A combined technique for amplifier oriented small-signal noise model extraction
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A combined technique for amplifier oriented small-signal noise model extraction

机译：放大器面向小型信号噪声模型提取的组合技术

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摘要

Based on the earlier experimental investigation of the existing GaAs pHEMT small-signal modeling approaches and their applicability to different manufacturing processes, a combined automatic small-signal noise model extraction technique, suitable for design of low-noise and buffer amplifiers is proposed. The technique is based on the usage of measured S-parameters of passive test structures and S-parameters of the transistor in cold modes. Expressions are given for extraction of the intrinsic parameters of an equivalent circuit using linear regression. It is shown that the application of the proposed method allows extracting a small-signal GaAs pHEMT model both in the probe-tip reference planes and at on-wafer calibration planes. The moving average algorithm was applied for preprocessing the results of measurements of the 50 Ohm noise figure during extraction of the noise model. The results of S-parameters and noise figure simulation agree well with the measurements. The new technique was implemented as a plugin in a commercial EDA tool and enables to derive a ready-to use small-signal noise model from measured S-parameters and 50 Ohm noise figure of a 0.15 μm GaAs pHEMT.
机译：基于对现有GaAs Phemt小型信号建模方法的先前实验研究及其对不同制造工艺的适用性，提出了一种适用于低噪声和缓冲放大器的设计的组合自动小信号噪声提取技术。该技术基于在冷模式下使用晶体管的被动测试结构的S参数和S参数的使用。表达式用于提取使用线性回归的等效电路的内在参数。结果表明，该方法的应用允许在探针尖端参考平面和在晶片校准平面上提取小信号GaAs PHEMT模型。应用移动平均算法用于预处理在噪声模型提取期间50欧姆噪声系数的测量结果。 S参数和噪声系数模拟的结果与测量很好。新技术被实施为商业EDA工具中的插件，并且可以从测量的S参数和0.15μmGaAsPhemt的50欧姆噪声系数中获得Ready-to使用的小信号噪声模型。

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