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首页> 外文期刊>Microwave Theory and Techniques, IEEE Transactions on >RF Small-Signal and Noise Modeling Including Parameter Extraction of Nanoscale MOSFET From Weak to Strong Inversion
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RF Small-Signal and Noise Modeling Including Parameter Extraction of Nanoscale MOSFET From Weak to Strong Inversion

机译：射频小信号和噪声建模，包括从弱反转到强反转的纳米级MOSFET参数提取

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摘要

The downscaling of CMOS processes has led to devices with an impressive RF performance. Advanced nanoscale RF MOSFETs present very high transit frequency, which can be traded off with lower power consumption, by shifting the operating point towards the weak inversion (WI) regime. This paper explores whether the simple RF schematics and models used in strong inversion remain valid in moderate or even down to deep WI regions for nanoscale devices. A simple RF equivalent circuit is proposed, leading to first-order analytical expressions, which are able to describe the RF small-signal behavior of nanoscale MOSFET, including noise, across all inversion levels. Using these expressions it is possible to extract the values of all the RF components and noise model parameters directly from measurements. The analytical models are compared to RF measurements of a commercial state-of-the-art 40-nm CMOS process and to the advanced BSIM6 compact bulk MOSFET model, showing very good accuracy.
机译：CMOS工艺的缩小导致了具有令人印象深刻的RF性能的设备。先进的纳米级RF MOSFET具有非常高的传输频率，可以通过将工作点移向弱反转（WI）方案来降低功耗。本文探讨了用于强反演的简单RF原理图和模型在中等规模甚至深至纳米级器件的WI区域是否仍然有效。提出了一个简单的RF等效电路，得出一阶分析表达式，该表达式能够描述所有反转电平下纳米级MOSFET的RF小信号行为，包括噪声。使用这些表达式可以直接从测量中提取所有RF分量的值和噪声模型参数。将分析模型与商业级40纳米CMOS工艺的RF测量结果以及先进的BSIM6紧凑型体MOSFET模型进行了比较，显示出非常好的准确性。

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