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首页> 外文期刊>Japanese journal of applied physics >Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures
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Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures

机译：在制造GaN有机异质结构中插入NiO电子阻挡层

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摘要

We report the fabrication of a NiO thin film on top of an n-type GaN epitaxial layer. The electron-blocking capability of NiO in a hybrid organic/inorganic heterostructure consisting of n-GaN/NiO/poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) (PEDOT: PSS) is discussed. Surface morphology, crystallography orientation, bandgap, and fermi level information of NiO films were investigated in detail. A rectifying property consistent with the proposed band diagram was observed in the current-voltage measurement. Theoretical analysis also demonstrated the effective electron blocking due to band alignment and a more balanced carrier distribution inside the GaN region with NiO inserted into the n-GaN/PEDOT: PSS heterostructure. This work provides a promising approach to the fabrication of high-efficiency hybrid optoelectronic devices. (C) 2018 The Japan Society of Applied Physics
机译：我们报告了在n型GaN外延层顶部制造NiO薄膜的过程。讨论了NiO在由n-GaN / NiO /聚（3,4-乙撑二氧噻吩）：聚苯乙烯磺酸盐（PEDOT：PSS）组成的有机/无机杂化结构中的电子阻挡能力。详细研究了NiO薄膜的表面形态，晶体学取向，带隙和费米能级信息。在电流-电压测量中观察到与提议的能带图一致的整流特性。理论分析还表明，由于能带对准和在NiO插入n-GaN / PEDOT：PSS异质结构中的GaN区内部更平衡的载流子分布，有效的电子阻挡。这项工作为高效率的混合光电器件的制造提供了一种有希望的方法。 （C）2018日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2018年第3期|030303.1-030303.4|共4页
  • 作者

    Li Junmei; Guo Wei; Jiang Jiean; Gao Pingqi; Bo Baoxue; Ye Jichun;

  • 作者单位

    Changchun Univ Sci & Technol, Natl Key Lab High Power Semicond Lasers, Changchun 130022, Jilin, Peoples R China;

    Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China;

    Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China;

    Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China;

    Changchun Univ Sci & Technol, Natl Key Lab High Power Semicond Lasers, Changchun 130022, Jilin, Peoples R China;

    Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China;

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